是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CXDB-X4 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.92 | 其他特性: | HIGH RELIABILITY |
配置: | SINGLE | 最大直流栅极触发电流: | 150 mA |
JESD-30 代码: | O-CXDB-X4 | 元件数量: | 1 |
端子数量: | 4 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
最大均方根通态电流: | 392 A | 断态重复峰值电压: | 1600 V |
重复峰值反向电压: | 1600 V | 表面贴装: | YES |
端子形式: | UNSPECIFIED | 端子位置: | UNSPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
N0194WC140 | IXYS | Silicon Controlled Rectifier, 391A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element |
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N0194WC160 | IXYS | Silicon Controlled Rectifier, 391A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, |
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|
N01L0818L1AD-85I | NANOAMP | 1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit |
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N01L0818L1AN-85I | NANOAMP | 1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit |
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N01L083WC2A | NANOAMP | 1Mb Ultra-Low Power Asynchronous CMOS SRAM |
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N01L083WC2AN | NANOAMP | 1Mb Ultra-Low Power Asynchronous CMOS SRAM |
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