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MEK600-04DA PDF预览

MEK600-04DA

更新时间: 2024-01-08 11:12:53
品牌 Logo 应用领域
IXYS 二极管局域网快速恢复二极管
页数 文件大小 规格书
1页 26K
描述
HiPerFRED Epitaxial Diode dual diode, common cathode

MEK600-04DA 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-XUFM-X3Reach Compliance Code:compliant
风险等级:5.74Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:FAST RECOVERY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-XUFM-X3元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:880 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.22 µs
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MEK600-04DA 数据手册

  
Advanced Technical Information  
HiPerFREDTM  
Epitaxial Diode  
dual diode, common cathode  
VRRM = 400 V  
IFAVM = 880 A  
MEK 600-04 DA  
trr  
= 220 ns  
1
2
3
3
VRSM  
V
VRRM  
V
Type  
2
1
400  
400  
MEK 600-04DA  
Symbol  
Conditions  
Maximum Ratings  
Features  
• HiPerFREDTM diode chips  
- fast reverse recovery  
- low operating forward voltage  
- low leakage current  
IFAVM  
IFAVM  
TC = 25°C; rectangular, d = 0.5  
TC = 80°C; rectangular, d = 0.5  
880  
575  
A
A
IFSM  
TVJ = 25°C; t = 10 ms (50 Hz), sine  
tbd  
A
- avalanche capability  
TVJ  
Tstg  
-40...+150  
-40...+125  
°C  
°C  
• Industry Standard package  
- with isolated DCB ceramic base plate  
- UL registered E72873  
Ptot  
VISOL  
Md  
TC = 25°C  
1100  
3600  
W
50/60 Hz, RMS; IISOL 1 mA  
V~  
Applications  
Mounting torque with screw M5  
Terminal connection torque  
2.25-2.75/20-25  
4.5-5.5/40-48  
Nm/lb.in.  
Nm/lb.in.  
• Topologies  
- dual diode with common cathode  
- high current single diode with pins 1  
and 3 paralleled  
a
Allowable acceleration  
50  
m/s2  
• Circuits  
- free wheeling diode of choppers,  
H-bridges, phaselegs etc.  
- secondary rectifier for switched  
mode power supplies, welders etc.  
Symbol  
Conditions  
Characteristic Values  
min.  
typ.  
max.  
IR  
TVJ = 25°C VR = VRRM  
TVJ = 125°C VR = VRRM  
6
mA  
mA  
6
Dimensions in mm (1 mm = 0.0394")  
VF  
IF = 400 A; TVJ = 125°C  
TVJ = 25°C  
1.1  
1.4  
V
V
trr  
IRM  
VR = 100 V; -diF/dt = 900 A/µs  
IF = 400 A; TVJ = 125°C  
220  
80  
ns  
A
RthJS  
RthJC  
0.11  
0.22  
K/W  
K/W  
dS  
dA  
Creeping distance on surface  
Strike distance through air  
12.7  
9.6  
mm  
mm  
Weight  
150  
g
Data according to IEC 60747  
© 2000 IXYS All rights reserved  
IXYS Semiconductor GmbH  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS Corporation  
Edisonstr. 15,  
Phone: +49-6206-503-0, Fax: +49-6206-503627  
D-68623 Lampertheim  
3540 Bassett Street, Santa Clara CA 95054  
Phone: (408) 982-0700, Fax: 408-496-0670  
1 - 1  

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