MegaMOSTMFET
Module
VMO 380-02 F VDSS = 200 V
ID25
= 385 A
RDS(on) = 4.6 mΩ
1
N-Channel Enhancement Mode
11
10
Preliminary data
2
11
Symbol
Test Conditions
Maximum Ratings
10
2
1
VDSS
VDGR
TJ = 25°C to 150°C
200
200
V
V
TJ = 25°C to 150°C; RGS = 10 kΩ
VGS
Continuous
Transient
±20
±30
V
V
VGSM
ID25
IDM
TK = 25°C
385
A
A
TK = 25°C, tP = 10 µs
1540
1 = Drain
10 = Kelvin Source
2 = Source
11 = Gate
PD
TC = 25°C
TK = 25°C
2230
1505
W
W
TJ
-40 ...+150
150
°C
°C
°C
TJM
Tstg
Features
-40 ... +125
●
International standard package
Direct Copper Bonded Al2O3 ceramic
base plate
●
VISOL
50/60 Hz
IISOL ≤ 1 mA
t = 1 min
t = 1 s
3000
3600
V~
V~
●
●
●
Isolation voltage 3600 V~
Low RDS(on) HDMOSTM process
Low package inductance for high
speed switching
Md
Mounting torque (M6)
Terminal connection torque (M5)
2.25-2.75/20-25 Nm/lb.in.
2.5-3.7/22-33 Nm/lb.in.
●
Kelvin Source contact for easy drive
Weight
typical including screws
250
g
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
●
AC motor speed control for electric
min.
typ. max.
vehicles
DC servo and robot drives
Switched-mode and resonant-mode
●
VDSS
VGS = 0 V, ID = 12 mA
200
3
V
V
●
power supplies
DC choppers in fork lift trucks
VGS(th)
VDS = 20 V, ID = 120 mA
6
●
IGSS
IDSS
VGS = ±20 V DC, VDS = 0
±500 nA
Advantages
VDS = VDSS
VDS = 0.8 • VDSS
,
VGS = 0 V TJ = 25°C
VGS = 0 V TJ = 125°C
2,5 mA
12 mA
,
●
Easy to mount
Space and weight savings
High power density
●
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
4.6 mΩ
●
●
Low losses
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSCorporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYSSemiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629