Datasheet > IXKH24N60C5

IXKH24N60C5

更新时间： 2024-01-29 09:45:18

品牌	Logo	应用领域
IXYS		局域网开关晶体管
页数	文件大小	规格书
4页	114K
描述
Power Field-Effect Transistor, 24A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

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技术参数
数据手册

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IXKH24N60C5 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

IXKH24N60C5 数据手册

IXKH 24N60C5

IXKP 24N60C5

CoolMOS^{™ 1)}Power MOSFET

N-Channel Enhancement Mode

Low R_DSon, High V_DSSMOSFET

Ultra low gate charge

I_D25

V_DSS

24A

= 600V

R_{DS(on) max}= 0.165Ω

TO-247 AD (IXKH)

Preliminary data

q D(TAB)

TO-220 AB (IXKP)

Features

MOSFET

• fast CoolMOS^{™ 1)}power MOSFET

- 4th generation

- High blocking capability

- Lowest resistance

Symbol

V_DSS

Conditions

Maximum Ratings

T_VJ= 25°C

600

V_GS

- Avalanche rated for unclamped

inductive switching (UIS)

- Low thermal resistance

due to reduced chip thickness

• Enhanced total power density

I_D25

I_D90

T_C= 25°C

T_C= 90°C

E_AS

E_AR

single pulse

repetitive

522

0.79

I_D= 7.9 A; T_C= 25°C

dV/dt

MOSFET dV/dt ruggedness V_DS= 0...480 V

50 V/ns

Applications

• Switched mode power supplies

(SMPS)

Symbol

Conditions

Characteristic Values

(T_VJ= 25°C, unless otherwise speciﬁed)

• Uninterruptible power supplies (UPS)

• Power factor correction (PFC)

• Welding

min. typ. max.

R_DSon

V_GS= 10 V; I_D= 12 A

150

165

mΩ

• Inductive heating

• PDP and LCD adapter

V_GS(th)

I_DSS

V_DS= V_GS; I_D= 0.79 mA

V_DS= 600 V; V_GS= 0 V

2.5

3.5

T_VJ= 25°C

T_VJ= 125°C

µA

¹⁾CoolMOS^™is a trademark of

Inﬁneon Technologies AG.

I_GSS

V_GS

20 V; V_DS= 0 V

100

C_iss

C_oss

V_GS= 0 V; V_DS= 100 V

f = 1 MHz

2000

100

Q_g

Q_gs

Q_gd

V_GS= 0 to 10 V; V_DS= 400 V; I_D= 12 A

t_d(on)

t_r

t_d(off)

t_f

V_GS= 10 V; V_DS= 400 V

I_D= 12 A; R_G= 3.3 Ω

R_thJC

0.5 K/W

IXYS reserves the right to change limits, test conditions and dimensions.

20080523c

1 - 4

12 3 4

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