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IXFB80N50Q2 PDF预览

IXFB80N50Q2

更新时间: 2024-02-02 10:30:59
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IXYS 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
2页 169K
描述
HiPerFET Power MOSFETs Q-Class

IXFB80N50Q2 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.75其他特性:AVALANCHE RATED
雪崩能效等级(Eas):5000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):80 A最大漏极电流 (ID):80 A
最大漏源导通电阻:0.06 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-264AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):960 W
最大脉冲漏极电流 (IDM):320 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFB80N50Q2 数据手册

 浏览型号IXFB80N50Q2的Datasheet PDF文件第2页 
Advance Technical Information  
HiPerFETTM  
V = 500 V  
IXFB 80N50Q2  
DSS  
Power MOSFETs  
ID25 = 80 A  
Q-Class  
R
DS(on)= 55 mΩ  
N-ChannelEnhancementMode  
Avalanche Rated, Low Qg, Low Intrinsic Rg  
High dV/dt, Low trr  
trr  
250 ns  
PLUS 264TM (IXFB)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
500  
500  
V
V
G
(TAB)  
D
S
VGS  
Continuous  
Transient  
±30  
±40  
V
V
VGSM  
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
80  
320  
80  
A
A
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
5.0  
mJ  
J
Features  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
20  
V/ns  
Double metal process for low gate  
resistance  
Unclamped Inductive Switching (UIS)  
rated  
PD  
TJ  
TC = 25°C  
890  
W
-55 ... +150  
°C  
Low package inductance  
- easy to drive and to protect  
TJM  
150  
-55 ... +150  
°C  
°C  
Fast intrinsic rectifier  
Tstg  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
Applications  
DC-DC converters  
Switched-mode and resonant-mode  
power supplies, >500kHz switching  
DC choppers  
Pulsegeneration  
Laser drivers  
Symbol  
VDSS  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Advantages  
VGS = 0 V, ID = 1mA  
500  
V
PLUS 264TM package for clip or spring  
mounting  
Space savings  
High power density  
VGS(th)  
IGSS  
VDS = VGS, ID = 8mA  
VGS = ±20 V, VDS = 0  
3.0  
5.0 V  
±200 nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
100 µA  
5 mA  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Note 1  
55 mΩ  
DS98958 (10/02)  
© 2002 IXYS All rights reserved  

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