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DSEP8-02A

更新时间: 2024-02-07 08:14:52
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描述
HiPerFRED Epitaxial Diode with soft recovery

DSEP8-02A 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-220AC包装说明:TO-220AC, 2 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.81Is Samacsys:N
其他特性:SNUBBER DIODE, FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.91 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:80 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
最大功率耗散:50 W认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.025 µs
子类别:Rectifier Diodes表面贴装:NO
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:35Base Number Matches:1

DSEP8-02A 数据手册

  
DSEP 8-02A  
HiPerFREDTM Epitaxial Diode  
with soft recovery  
IFAV = 8 A  
VRRM = 200 V  
trr = 25 ns  
Preliminary Data  
TO-220 AC  
VRSM  
V
VRRM  
V
Type  
A
C
C
A
200  
200  
DSEP 8-02A  
C (TAB)  
A = Anode, C = Cathode, TAB = Cathode  
Symbol  
Test Conditions  
Maximum Ratings  
IFRMS  
IFAVM  
35  
8
A
A
TC = 150°C; rectangular, d = 0.5  
Features  
IFSM  
EAS  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
80  
A
TVJ = 25°C; non-repetitive  
IAS = 2 A; L = 180 µH  
0.5  
mJ  
International standard package  
Planar passivated chips  
Very short recovery time  
Extremely low switching losses  
Low IRM-values  
Soft recovery behaviour  
IAR  
VA = 1.5·VR typ.; f = 10 kHz; repetitive  
0.2  
A
TVJ  
TVJM  
Tstg  
-55...+175  
175  
-55...+150  
°C  
°C  
°C  
Epoxy meets UL 94V-0  
Ptot  
TC = 25°C  
mounting torque  
typical  
60  
0.4...0.6  
2
W
Nm  
g
Md  
Applications  
Weight  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode in converters  
Symbol  
Test Conditions  
Characteristic Values  
typ.  
max.  
and motor control circuits  
Rectifiers in switch mode power  
supplies (SMPS)  
Inductive heating  
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
IR  
TVJ = 25°C VR = VRRM  
TVJ = 150°C VR = VRRM  
50  
0.2  
mA  
mA  
VF  
IF = 8 A;  
TVJ = 150°C  
TVJ = 25°C  
0.94  
1.30  
V
V
RthJC  
RthCH  
2.5  
K/W  
K/W  
0.5  
25  
Advantages  
trr  
IF = 1 A; -di/dt = 50 A/ms;  
ns  
VR = 30 V; TVJ = 25°C  
Avalanche voltage rated for reliable  
operation  
Soft reverse recovery for low  
IRM  
VR = 100 V; IF = 10 A; -diF/dt = 100 A/ms  
TVJ = 100°C  
4.1  
A
EMI/RFI  
Low IRM reduces:  
- Power dissipation within the diode  
- Turn-on loss in the commutating  
switch  
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Pulse Width = 300 ms, Duty Cycle < 2.0 %  
Dimensions see outlines.pdf  
Data according to IEC 60747 and per diode unless otherwise specified  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2000 IXYS All rights reserved  
1 - 1  

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