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IS93C56-3GI PDF预览

IS93C56-3GI

更新时间： 2024-01-23 20:34:08
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
10页 85K
描述
2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM

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IS93C56-3GI 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DIP包装说明：DIP, DIP8,.3
针数：8Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.91其他特性：AUTOMATIC WRITE
最大时钟频率 (fCLK)：1 MHz数据保留时间-最小值：10
耐久性：100000 Write/Erase CyclesJESD-30 代码：R-PDIP-T8
JESD-609代码：e0长度：9.3218 mm
内存密度：2048 bit内存集成电路类型：EEPROM
内存宽度：16功能数量：1
端子数量：8字数：128 words
字数代码：128工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：128X16输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：DIP
封装等效代码：DIP8,.3封装形状：RECTANGULAR
封装形式：IN-LINE并行/串行：SERIAL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：3/5 V
认证状态：Not Qualified座面最大高度：4.572 mm
串行总线类型：MICROWIRE最大待机电流：0.00001 A
子类别：EEPROMs最大压摆率：0.006 mA
最大供电电压 (Vsup)：6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：NO
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：7.62 mm
最长写入周期时间 (tWC)：10 ms写保护：SOFTWARE
Base Number Matches：1

IS93C56-3GI 数据手册

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®
IS93C56-3  
2,048-BIT SERIAL ELECTRICALLY  
ERASABLE PROM  
ISSI  
MARCH 2001  
FEATURES  
OVERVIEW  
• State-of-the-artarchitecture  
— Non-volatile data storage  
The IS93C56-3 is a low cost 2,048-bit, non-volatile, serial  
E2PROM. It is fabricated using ISSI’s advanced CMOS  
E2PROM technology. The IS93C56-3 provides efficient  
non-volatile read/write memory arranged as 128 registers  
of 16 bits each. Seven 11-bit instructions control the  
operation of the device, which includes read, write, and  
mode enable functions. The data out pin (DOUT) indicates  
the status of the device during in the self-timed non-  
volatile programming cycle.  
— Low voltage operation:  
3.0V (Vcc = 2.7V to 6.0V)  
— Full TTL compatible inputs and outputs  
— Auto increment for efficient data dump  
• Low voltage read operation  
— Down to 2.7V  
• Hardware and software write protection  
— Defaults to write-disabled state at power-up  
— Softwareinstructionsforwrite-enable/disable  
• Advanced low voltage CMOS E2PROM  
technology  
• Versatile, easy-to-useInterface  
— Self-timedprogrammingcycle  
— Automaticerase-before-write  
— Programming status indicator  
— Word and chip erasable  
The self-timed write cycle includes an automatic erase-  
before-write capability. To protect against inadvertent  
writes, the WRITE instruction is accepted only while the  
chip is in the write enabled state. Data is written in 16 bits  
per write instruction into the selected register. If Chip  
Select (CS) is brought HIGH after initiation of the write  
cycle, the Data Output (DOUT) pin will indicate the READY/  
BUSY status of the chip.  
APPLICATIONS  
The IS93C56-3 is ideal for high-volume applications  
requiring low power and low density storage. This device  
uses a low cost, space saving 8-pin package. Candidate  
applications include robotics, alarm devices, electronic  
locks, meters and instrumentation settings.  
— Stop SK anytime for power savings  
• Durable and reliable  
— 10-year data retention after 100K write cycles  
— 100,000 write cycles  
— Unlimited read cycles  
FUNCTIONAL BLOCK DIAGRAM  
DUMMY  
BIT  
DOUT  
DATA  
REGISTER  
(16 BITS)  
INSTRUCTION  
REGISTER  
(11 BITS)  
R/W  
AMPS  
DIN  
EEPROM  
ADDRESS  
REGISTER  
INSTRUCTION  
DECODE,  
CONTROL,  
AND  
1 OF 128  
DECODER  
ARRAY  
CS  
(128 X 16)  
CLOCK  
SK  
GENERATION  
HIGH VOLTAGE  
GENERATOR  
WRITE  
ENABLE  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any  
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
Rev. G  
1
04/26/01  
1234567...10

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