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IS42LS32400AL-10BI PDF预览

IS42LS32400AL-10BI

更新时间: 2024-01-21 01:49:01
品牌 Logo 应用领域
美国芯成 - ISSI 时钟动态存储器内存集成电路
页数 文件大小 规格书
66页 577K
描述
Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, FBGA-90

IS42LS32400AL-10BI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:BGA, BGA90,9X15,32针数:90
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.92
访问模式:FOUR BANK PAGE BURST最长访问时间:7 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):100 MHz
I/O 类型:COMMON交错的突发长度:1,2,4,8
JESD-30 代码:R-PBGA-B90JESD-609代码:e0
内存密度:134217728 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:32功能数量:1
端口数量:1端子数量:90
字数:4194304 words字数代码:4000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX32
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA90,9X15,32
封装形状:RECTANGULAR封装形式:GRID ARRAY
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.8/2.5,2.5 V
认证状态:Not Qualified刷新周期:4096
自我刷新:YES连续突发长度:1,2,4,8,FP
最大待机电流:0.00001 A子类别:DRAMs
最大压摆率:0.2 mA最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

IS42LS32400AL-10BI 数据手册

 浏览型号IS42LS32400AL-10BI的Datasheet PDF文件第2页浏览型号IS42LS32400AL-10BI的Datasheet PDF文件第3页浏览型号IS42LS32400AL-10BI的Datasheet PDF文件第4页浏览型号IS42LS32400AL-10BI的Datasheet PDF文件第5页浏览型号IS42LS32400AL-10BI的Datasheet PDF文件第6页浏览型号IS42LS32400AL-10BI的Datasheet PDF文件第7页 
IS42S81600AL, IS42LS81600AL  
IS42S16800AL, IS42LS16800AL  
IS42S32400AL, IS42LS32400AL  
16Meg x 8, 8Meg x16 & 4Meg x 32  
128-MBIT LOW-POWER  
SYNCHRONOUS DRAM  
®
ISSI  
PRELIMINARY INFORMATION  
SEPTEMBER 2003  
OVERVIEW  
FEATURES  
ISSI's 128Mb Low - Power Synchronous DRAM achieves  
high-speed data transfer using pipeline architecture. All  
inputs and outputs signals refer to the rising edge of the  
clock input. The 128Mb SDRAM is organized as follows.  
• Clock frequency: 133, 100, MHz  
• Fully synchronous; all signals referenced to a  
positive clock edge  
• Internal bank for hiding row access/precharge  
• Power supply  
VDD  
VDDQ  
IS42LS81600AL  
IS42S81600AL  
4Mx8x4Banks  
54-PinTSOPII  
IS42LS16800AL  
IS42S16800AL  
2Mx16x4Banks  
54-ball FBGA  
IS42LS32400AL  
IS42S32400AL  
1Mx32x4Banks  
90-ball FBGA  
IS42LS81600AL  
IS42LS16800AL  
2.5V 1.8V (2.5V tolerant)  
2.5V 1.8V (2.5V tolerant)  
IS42LS32400AL  
IS42S81600AL  
2.5V 1.8V (2.5V tolerant)  
3.3V 3.3V  
54-pinTSOPII  
86-pinTSOPII  
IS42S16800AL  
IS42S32400AL  
3.3V 3.3V  
3.3V 3.3V  
• LVTTL interface  
• Programmable burst length  
– (1, 2, 4, 8, full page)  
KEY TIMING PARAMETERS  
• Extended Mode Register  
Parameter  
-7  
-10 Unit  
• Programmable Power Reduction Feature by  
partial array activation during Self-Refresh  
Clk Cycle Time  
CAS Latency = 3  
CAS Latency = 2  
7
10  
10  
10  
ns  
ns  
• Auto Precharge and Auto refresh Modes  
• Temp. Compensated Self Refresh.  
Clk Frequency  
CAS Latency = 3  
CAS Latency = 2  
133  
100  
100  
100  
Mhz  
Mhz  
• Self Refresh Mode: Standard and Low-Power  
• 4096 refresh cycles every 64 ms  
Access Time from Clock  
CAS Latency = 3  
5.4  
6
7
9
ns  
ns  
• Random column address every clock cycle  
• Programmable CAS latency (2, 3 clocks)  
CAS Latency = 2  
• Burst read/write and burst read/single write  
operations capability  
• Burst termination by burst stop and Precharge  
command  
• Industrial Temperature Availability  
• Lead-freeAvailability  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
PRELIMINARY INFORMATION, Rev. 00A  
1
09/18/03  

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