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2N5869 PDF预览

2N5869

更新时间: 2024-01-28 05:47:18
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 119K
描述
Silicon NPN Power Transistors

2N5869 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.77外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

2N5869 数据手册

 浏览型号2N5869的Datasheet PDF文件第2页浏览型号2N5869的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N5869 2N5870  
DESCRIPTION  
·With TO-3 package  
·Low collector saturation voltage  
APPLICATIONS  
·For medium-speed switching and  
amplifier applications  
PINNING  
PIN  
DESCRIPTION  
1
Base  
2
3
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
Collector  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALU
60  
UNIT  
2N5869  
2N5870  
2N5869  
2N5870  
VCBO  
Collector-base voltage  
Open emitter  
V
80  
60  
VCEO  
Collector-emitter oltage  
Open base  
V
80  
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
5
V
A
5
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25  
87.5  
150  
-65~200  
W
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-c  
Thermal resistance junction to case  
1.17  
/W  

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