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2N5606 PDF预览

2N5606

更新时间: 2024-01-01 08:52:18
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 127K
描述
Silicon NPN Power Transistors

2N5606 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-66
包装说明:FLANGE MOUNT, O-MBFM-P2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.31外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):70
JEDEC-95代码:TO-213AAJESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):70 MHz
Base Number Matches:1

2N5606 数据手册

 浏览型号2N5606的Datasheet PDF文件第2页浏览型号2N5606的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612  
DESCRIPTION  
·With TO-66 package  
·Excellent safe operating area  
·Low collector saturation voltage  
APPLICATIONS  
·For general-purpose amplifier ;  
and switching applications  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-66) and symbol  
3
Collector  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VAL
80  
UNIT  
2N5606  
VCBO  
Collector-base voltage  
Open emitter  
V
2N5608/5610  
2N5612  
100  
120  
60  
2N5606  
VCEO  
Collector-emitter voltage  
Open base  
Open collector  
TC=25  
V
2N5608/5610  
2N5612  
80  
100  
5
VEBO  
IC  
Emitter-base voltage  
Collector current  
V
A
5
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
25  
W
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
4.37  
/W  

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