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2N5601 PDF预览

2N5601

更新时间: 2024-02-06 04:56:23
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 128K
描述
Silicon PNP Power Transistors

2N5601 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.92
最大集电极电流 (IC):2 A配置:Single
最小直流电流增益 (hFE):70JESD-609代码:e0
最高工作温度:175 °C极性/信道类型:PNP
最大功率耗散 (Abs):20 W子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
标称过渡频率 (fT):60 MHz

2N5601 数据手册

 浏览型号2N5601的Datasheet PDF文件第2页浏览型号2N5601的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2N5597 2N5599 2N5601 2N5603  
DESCRIPTION  
·With TO-66 package  
·Excellent safe operating area  
·Low collector saturation voltage  
APPLICATIONS  
·For high frequency power amplifier ;  
audio power amplifier and drivers.  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-66) and symbol  
3
Collector  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-80  
UNIT  
2N5597  
VCBO  
Collector-base voltage  
Open emitter  
V
2N5599/5601  
2N5603  
-100  
-120  
-60  
2N5597  
VCEO  
Collector-emitter voltage  
Open base  
Open collector  
TC=25  
V
2N5599/5601  
2N5603  
-80  
-100  
-5  
VEBO  
IC  
Emitter-base voltage  
Collector current  
V
A
-2  
PD  
Tj  
Total power dissipation  
Junction temperature  
Storage temperature  
20  
W
150  
Tstg  
-65~150  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
4.37  
/W  

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