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2N5467 PDF预览

2N5467

更新时间: 2024-02-13 00:29:38
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 130K
描述
Silicon NPN Power Transistors

2N5467 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:unknown风险等级:5.77
最大集电极电流 (IC):3 A集电极-发射极最大电压:400 V
配置:SINGLEJEDEC-95代码:TO-205AD
JESD-30 代码:O-MBCY-W3元件数量:1
端子数量:3封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):2.5 MHzBase Number Matches:1

2N5467 数据手册

 浏览型号2N5467的Datasheet PDF文件第2页浏览型号2N5467的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N5466 2N5467  
DESCRIPTION  
·With TO-3 package  
·High-voltage capability  
·Fast switching speeds  
·Low collector saturation voltage  
APPLICATIONS  
·They are intended for use in off-line power  
supplies ,inverter and converter circuits  
PINNING  
PIN  
DESCRIPTION  
1
Base  
2
3
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
Collector  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2N5466  
2N5467  
500  
VCBO  
Collector-base voltage  
Open emitter  
Open base  
V
700  
VCEO  
VEBO  
IC  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
400  
V
V
Open collector  
7
3
5
A
ICM  
IB  
Collector current-peak  
Base current  
A
1
A
PD  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25  
140  
150  
-65~200  
W
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
1.48  
/W  

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