生命周期: | Obsolete | 零件包装代码: | TO-66 |
包装说明: | FLANGE MOUNT, O-MBFM-P2 | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.76 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 120 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 50 |
JEDEC-95代码: | TO-213AA | JESD-30 代码: | O-MBFM-P2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 50 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N4864E3 | MICROSEMI | Power Bipolar Transistor, 2A I(C), 120V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, METAL |
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|
2N4865 | ETC | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 90A I(C) | STR-1/2 |
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|
2N4866 | NJSEMI | SI NPN POWER BJT |
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|
2N4866E3 | MICROSEMI | Power Bipolar Transistor, 90A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, |
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|
2N4867 | INTERSIL | N-CHANNEL JFET |
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2N4867 | INTERFET | N-Channel Silicon Junction Field-Effect Transistor |
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