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IRLU024NPBF PDF预览

IRLU024NPBF

更新时间: 2024-02-16 23:03:48
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
10页 305K
描述
HEXFET Power MOSFET

IRLU024NPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-251AA
包装说明:LEAD FREE, PLASTIC, IPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.27其他特性:AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):25 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):16 A最大漏极电流 (ID):16 A
最大漏源导通电阻:0.058 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):35 W
最大脉冲漏极电流 (IDM):64 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRLU024NPBF 数据手册

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PD- 95081A  
IRLR024NPbF  
IRLU024NPbF  
HEXFET® Power MOSFET  
l Logic-Level Gate Drive  
l Surface Mount (IRLR024N)  
l Straight Lead (IRLU024N)  
l Advanced Process Technology  
l Fast Switching  
D
VDSS = 55V  
R
DS(on) = 0.065Ω  
G
l Fully Avalanche Rated  
l Lead-Free  
ID = 17A  
S
Description  
Fifth Generation HEXFET® Power MOSFETs from International Rectifier  
utilize advanced processing techniques to achieve the lowest possible on-  
resistance per silicon area. This benefit, combined with the fast switching  
speed and ruggedized device design that HEXFET power MOSFETs are well  
known for, provides the designer with an extremely efficient device for use in  
a wide variety of applications.  
The D-PAK is designed for surface mounting using vapor phase, infrared, or  
wave soldering techniques. The straight lead version (IRFU series) is for  
through-hole mounting applications. Power dissipation levels up to 1.5 watts  
are possible in typical surface mount applications.  
D-Pak  
I-Pak  
IRLR024NPbF IRLU024NPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
17  
12  
A
72  
PD @TC = 25°C  
PowerDissipation  
45  
W
W/°C  
V
LinearDeratingFactor  
0.3  
VGS  
EAS  
IAR  
Gate-to-SourceVoltage  
± 16  
Single Pulse Avalanche Energy‚  
AvalancheCurrent  
68  
mJ  
A
11  
4.5  
EAR  
dv/dt  
TJ  
RepetitiveAvalancheEnergy  
Peak Diode Recovery dv/dt ƒ  
OperatingJunctionand  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
StorageTemperatureRange  
SolderingTemperature, for10seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
3.3  
Units  
RθJC  
RθJA  
RθJA  
Case-to-Ambient(PCBmount)**  
Junction-to-Ambient  
–––  
50  
°C/W  
–––  
110  
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .  
For recommended footprint and soldering techniques refer to application note #AN-994  
www.irf.com  
1
12/6/04  

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