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HF40D120ACE PDF预览

HF40D120ACE

更新时间: 2024-02-18 04:03:36
品牌 Logo 应用领域
英飞凌 - INFINEON 功效二极管
页数 文件大小 规格书
2页 59K
描述
Rectifier Diode, 1 Phase, 1 Element, 25A, Silicon, 125 MM, WAFER

HF40D120ACE 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIE包装说明:O-XUUC-N1
针数:1Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.40
风险等级:5.6应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.7 V
JESD-30 代码:O-XUUC-N1湿度敏感等级:1
元件数量:1相数:1
端子数量:1最大输出电流:25 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:UNCASED CHIP峰值回流温度(摄氏度):225
认证状态:Not Qualified最大重复峰值反向电压:1200 V
子类别:Rectifier Diodes表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

HF40D120ACE 数据手册

 浏览型号HF40D120ACE的Datasheet PDF文件第2页 
PD - 93876  
HF40D120ACE  
Hexfred Die in Wafer Form  
Features  
• GEN3 Hexfred Technology  
• Low VF  
• Low IRR  
• Low tRR  
1200V  
F(nom)=25A  
VF(typ)= 1ꢀ78V @ IF(nom) @ 25°C  
Motor Control Antiparallel Diode  
125mm Wafer  
I
• Soft Reverse Recovery  
Benefits  
• Benchmark Efficiency for Motor Control Applications  
• Rugged Transient Performance  
• Low EMI  
• Excellent Current Sharing in Parallel Operation  
Electrical Characteristics (Wafer Form)  
Parameter  
Description  
Guaranteed (min, max)  
Test Conditions  
VF  
Forward Voltage Drop  
1'30V min, 1'7V max  
1200V min  
IF = 10A, TJ = 25°C  
BVR  
IRM  
Reverse Breakdown Voltage  
Reverse Leakage Current  
TJ = 25°C, IR = 150µA  
TJ = 25°C, VR = 1200V  
10µA max  
Mechanical Data  
Nominal Backmetal Composition, (Thickness)  
Nominal Front Metal Composition, (Thickness)  
Dimensions  
Cr- Ni - Ag, (1kA - 4kA - 6kA)  
99% Al/1% Si, (3µm)  
0'169" x 0'220"  
Wafer Diameter  
125mm, with std' < 100 > flat  
310µm, +/-15µm  
Wafer Thickness, Tolerance  
Relevant Die Mechanical Dwg' Number  
Minimum Street Width  
01 - 5328  
100µm  
Reject Ink Dot Size  
0'25mm diameter minimum  
Consistent throughout same wafer lot  
Store in original container, in dessicated  
nitrogen, with no contamination  
For optimum electrical results, die attach  
temperature should not exceed 300°C  
Ink Dot Location  
Recommended Storage Environment  
Recommended Die Attach Conditions  
Die Outline  
4.29  
NOTES:  
[.169]  
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].  
2. CONTROLLING DIMENSION: [INCH].  
3. DIMENSIONAL TOLERANCES:  
BONDING PADS: < 0.635 TOLERANCE  
=
+ /- 0.013  
< [.0250] TOLERANCE = + /- [.0005]  
> 0.635 TOLERANCE + /- 0.025  
WIDT H  
&
4.14  
[.163]  
5.59  
[.220]  
ANODE  
=
LENGTH  
> [.0250] TOLERANCE = + /- [.0010]  
OVERALL DIE:  
WIDT H  
< 1.270 TOLERANCE = + /- 0.102  
< [.050] TOLERANCE = + /- [.004]  
> 1.270 TOLERANCE = + /- 0.203  
> [.050] TOLERANCE = + /- [.008]  
&
LENGTH  
2.84  
[.112]  
01-5328  
Page 1  
wwwꢀirfꢀcom  
4/7/2000  

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