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5962F9562601VYC PDF预览

5962F9562601VYC

更新时间: 2024-01-28 21:50:50
品牌 Logo 应用领域
英特矽尔 - INTERSIL 可编程只读存储器
页数 文件大小 规格书
5页 136K
描述
Radiation Hardened 8K x 8 CMOS PROM

5962F9562601VYC 技术参数

生命周期:Transferred包装说明:,
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.69
Is Samacsys:N其他特性:RADIATION-HARDENED PROM
JESD-30 代码:R-CDFP-F28内存密度:65536 bit
内存集成电路类型:OTP ROM内存宽度:8
功能数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:8KX8
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
认证状态:Not Qualified标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:FLAT
端子位置:DUAL总剂量:300k Rad(Si) V
Base Number Matches:1

5962F9562601VYC 数据手册

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HS-6664RH  
TM  
Data Sheet  
August 2000  
File Number 3197.4  
Radiation Hardened 8K x 8 CMOS PROM  
Features  
The Intersil HS-6664RH is a radiation hardened 64K CMOS  
PROM, organized in an 8K word by 8-bit format. The chip is  
manufactured using a radiation hardened CMOS process,  
and utilizes synchronous circuit design techniques to  
achieve high speed performance with very low power  
dissipation.  
• Electrically Screened to SMD # 5962-95626  
• QML Qualified per MIL-PRF-38535 Requirements  
• 1.2 Micron Radiation Hardened Bulk CMOS  
Total Dose . . . . . . . . . . . . . . . . . . . . . . 300 krad(Si) (Max)  
8
Transient Output Upset. . . . . . . . . . . . . .>5 x 10 rad(Si)/s  
On-chip address latches are provided, allowing easy  
interfacing with microprocessors that use a multiplexed  
address/data bus structure. The output enable control (G)  
simplifies system interfacing by allowing output data bus  
control in addition to the chip enable control (E). All bits are  
manufactured storing a logical “0” and can be selectively  
programmed for a logical “1” at any bit location.  
2
• LET >100 MEV-cm /mg  
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . . 35ns (Typ)  
• Single 5V Power Supply  
• Single Pulse 10V Field Programmable  
• Synchronous Operation  
Applications for the HS-6664RH CMOS PROM include low  
power microprocessor based instrumentation and  
communications systems, remote data acquisition and  
processing systems, and processor control storage.  
• On-Chip Address Latches  
• Three-State Outputs  
• NiCr Fuses  
Specifications for Rad Hard QML devices are controlled  
by the Defense Supply Center in Columbus (DSCC). The  
SMD numbers listed here must be used when ordering.  
• Low Standby Current . . . . . . . . . . . . . . <500µA (Pre-Rad)  
• Low Operating Current . . . . . . . . . . . . . . . . . .<15mA/MHz  
o
o
• Military Temperature Range . . . . . . . . . . . -55 C to 125 C  
Detailed Electrical Specifications for these devices are  
contained in SMD 5962-95626. A “hot-link” is provided  
on our homepage for downloading.  
www.intersil.com/spacedefense/space.htm  
Ordering Information  
INTERNAL  
MKT. NUMBER  
TEMP. RANGE  
o
ORDERING NUMBER  
5962F9562601QXC  
5962F9562601QYC  
5962F9562601VXC  
5962F9562601VYC  
HS1-6664RH/PROTO  
HS9-6664RH/PROTO  
( C)  
HS1-6664RH-8  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
HS9-6664RH-8  
HS1-6664RH-Q  
HS9-6664RH-Q  
HS1-6664RH/PROTO  
HS9-6664RH/PROTO  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
1

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