生命周期: | Active | 包装说明: | UNCASED CHIP, R-XUUC-X7 |
Reach Compliance Code: | unknown | 风险等级: | 5.7 |
外壳连接: | SUBSTRATE | 配置: | SEPARATE, 2 ELEMENTS |
最小漏源击穿电压: | 40 V | 最大漏极电流 (ID): | 0.05 A |
最大漏源导通电阻: | 300 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 1 pF | JESD-30 代码: | R-XUUC-X7 |
元件数量: | 2 | 端子数量: | 7 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | UNCASED CHIP |
极性/信道类型: | P-CHANNEL | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
3N190/D | NJSEMI | Small Signal Field-Effect Transistor, 0.05A I(D), 40V, 2-Element, P-Channel, Silicon, Meta |
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|
3N190_TO-78 | MICROSS | a monolithic dual enhancement mode P-Channel Mosfet |
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|
3N190-1 | Linear Systems | P-CHANNEL DUAL MOSFET ENHANCEMENT MODE |
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|
3N190-91 | CALOGIC | Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
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|
3N191 | CALOGIC | Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
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|
3N191 | Linear Systems | P-CHANNEL DUAL MOSFET ENHANCEMENT MODE |
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