是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.66 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 0.05 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 200 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 0.375 W | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
3N163(TO-72) | MICROSS | Transistor |
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3N163_TO-72 | MICROSS | P-CHANNEL MOSFET |
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3N163-1 | VISHAY | Small Signal Field-Effect Transistor, 0.05A I(D), 40V, 1-Element, P-Channel, Silicon, Meta |
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3N163-2 | VISHAY | Small Signal Field-Effect Transistor, 0.05A I(D), 40V, 1-Element, P-Channel, Silicon, Meta |
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3N163-4 | Linear Systems | P-CHANNEL ENHANCEMENT MODE |
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3N163-E3 | VISHAY | TRANSISTOR 50 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-206AF, ROHS COMPLIANT, HER |
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