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2N6977 PDF预览

2N6977

更新时间: 2024-01-14 13:56:20
品牌 Logo 应用领域
英特矽尔 - INTERSIL 双极性晶体管
页数 文件大小 规格书
4页 44K
描述
5A, 400V and 500V N-Channel IGBTs

2N6977 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, O-MBFM-P2Reach Compliance Code:unknown
风险等级:5.39外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:400 V
配置:SINGLE最大降落时间(tf):500 ns
门极发射器阈值电压最大值:4.5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):100 W
认证状态:Not Qualified最大上升时间(tr):50 ns
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON

2N6977 数据手册

 浏览型号2N6977的Datasheet PDF文件第2页浏览型号2N6977的Datasheet PDF文件第3页浏览型号2N6977的Datasheet PDF文件第4页 
2N6975, 2N6976,  
2N6977, 2N6978  
Semiconductor  
5A, 400V and 500V N-Channel IGBTs  
April 1995  
Features  
Package  
JEDEC TO-204AA  
BOTTOM VIEW  
• 5A, 400V and 500V  
• VCE(ON) 2V  
COLLECTOR  
EMITTER  
(FLANGE)  
• TFI 1µs, 0.5µs  
• Low On-State Voltage  
• Fast Switching Speeds  
• High Input Impedance  
GATE  
Terminal Diagram  
Applications  
• Power Supplies  
• Motor Drives  
N-CHANNEL ENHANCEMENT MODE  
C
• Protection Circuits  
G
Description  
E
The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel  
enhancement-mode insulated gate bipolar transistors (IGBTs)  
designed for high-voltage, low on-dissipation applications such as  
switching regulators and motor drivers. These types can be operated  
directly from low-power integrated circuits.  
PACKAGING AVAILABILITY  
PART NUMBER  
2N6975  
PACKAGE  
TO-204AA  
TO-204AA  
TO-204AA  
TO-204AA  
BRAND  
2N6976  
2N6977  
2N6978  
NOTE: When ordering, use the entire part number.  
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified.  
C
2N6975/2N6977  
2N6976/2N6978  
(Note 1)  
(Note 1)  
UNITS  
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
400  
500  
V
V
V
V
A
A
W
CES  
Collector-Gate Voltage (R = 1M) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
400  
500  
GE  
CGR  
Reverse Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
5
5
CES(REV.)  
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
±20  
±20  
GE  
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
5
10  
5
10  
C
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
CM  
o
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P  
100  
100  
C
D
o
o
Power Dissipation Derating T > +25 C  
0.8  
0.8  
W/ C  
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . T , T  
-55 to +150  
-55 to +150  
C
J
STG  
NOTE:  
1. JEDEC registered value.  
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:  
4,364,073  
4,587,713  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,417,385  
4,598,461  
4,644,637  
4,801,986  
4,883,767  
4,430,792  
4,605,948  
4,682,195  
4,803,533  
4,888,627  
4,443,931  
4,618,872  
4,684,413  
4,809,045  
4,890,143  
4,466,176  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,516,143  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,532,534  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,567,641  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.  
File Number 2297.2  
Copyright © Harris Corporation 1995  
3-1  

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