2N6975, 2N6976,
2N6977, 2N6978
Semiconductor
5A, 400V and 500V N-Channel IGBTs
April 1995
Features
Package
JEDEC TO-204AA
BOTTOM VIEW
• 5A, 400V and 500V
• VCE(ON) 2V
COLLECTOR
EMITTER
(FLANGE)
• TFI 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
GATE
Terminal Diagram
Applications
• Power Supplies
• Motor Drives
N-CHANNEL ENHANCEMENT MODE
C
• Protection Circuits
G
Description
E
The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel
enhancement-mode insulated gate bipolar transistors (IGBTs)
designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER
2N6975
PACKAGE
TO-204AA
TO-204AA
TO-204AA
TO-204AA
BRAND
2N6976
2N6977
2N6978
NOTE: When ordering, use the entire part number.
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified.
C
2N6975/2N6977
2N6976/2N6978
(Note 1)
(Note 1)
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
400
500
V
V
V
V
A
A
W
CES
Collector-Gate Voltage (R = 1MΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
400
500
GE
CGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
5
5
CES(REV.)
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
±20
±20
GE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
5
10
5
10
C
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
o
Power Dissipation Total at T = +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
100
100
C
D
o
o
Power Dissipation Derating T > +25 C
0.8
0.8
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . T , T
-55 to +150
-55 to +150
C
J
STG
NOTE:
1. JEDEC registered value.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
File Number 2297.2
Copyright © Harris Corporation 1995
3-1