5秒后页面跳转
2N6796 PDF预览

2N6796

更新时间: 2024-02-27 19:53:05
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关
页数 文件大小 规格书
7页 136K
描述
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET

2N6796 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:LCC包装说明:CHIP CARRIER, R-CQCC-N15
针数:16Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.23
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):8 A最大漏源导通电阻:0.195 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CQCC-N15
元件数量:1端子数量:15
工作模式:ENHANCEMENT MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:QUAD晶体管元件材料:SILICON
Base Number Matches:1

2N6796 数据手册

 浏览型号2N6796的Datasheet PDF文件第2页浏览型号2N6796的Datasheet PDF文件第3页浏览型号2N6796的Datasheet PDF文件第4页浏览型号2N6796的Datasheet PDF文件第5页浏览型号2N6796的Datasheet PDF文件第6页浏览型号2N6796的Datasheet PDF文件第7页 
2N6796  
Data Sheet  
November 1998  
File Number 1594.2  
8A, 100V, 0.180 Ohm, N-Channel Power  
MOSFET  
Features  
• 8A, 100V  
• r = 0.180  
The 2N6796 is an N-Channel enhancement mode silicon  
gate power field effect transistor designed for applications  
such as switching regulators, switching converters, motor  
drivers, relay drivers, and drivers for high power bipolar  
switching transistors requiring high speed and low gate drive  
power. This type can be operated directly from integrated  
circuits.  
DS(ON)  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
• Majority Carrier Device  
Ordering Information  
• Related Literature  
PART NUMBER  
PACKAGE  
BRAND  
2N6796  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
2N6796  
TO-205AF  
NOTE: When ordering, use the entire part number.  
Symbol  
D
G
S
Packaging  
JEDEC TO-205AF  
DRAIN  
(CASE)  
SOURCE  
GATE  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
http://www.intersil.com or 321-724-7143 | Copyright © Intersil Corporation 1999  
1

与2N6796相关器件

型号 品牌 描述 获取价格 数据表
2N6796_03 SEME-LAB TMOS FET ENHANCEMENT N - CHANNEL

获取价格

2N6796_10 MICROSEMI N-CHANNEL MOSFET

获取价格

2N6796E INFINEON Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S

获取价格

2N6796E3 MICROSEMI Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-

获取价格

2N6796EAPBF INFINEON Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S

获取价格

2N6796EB INFINEON Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S

获取价格