是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | LCC | 包装说明: | CHIP CARRIER, R-CQCC-N15 |
针数: | 16 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.23 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 8 A | 最大漏源导通电阻: | 0.195 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CQCC-N15 |
元件数量: | 1 | 端子数量: | 15 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | QUAD | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N6796_03 | SEME-LAB | TMOS FET ENHANCEMENT N - CHANNEL |
获取价格 |
|
2N6796_10 | MICROSEMI | N-CHANNEL MOSFET |
获取价格 |
|
2N6796E | INFINEON | Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
获取价格 |
|
2N6796E3 | MICROSEMI | Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal- |
获取价格 |
|
2N6796EAPBF | INFINEON | Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
获取价格 |
|
2N6796EB | INFINEON | Power Field-Effect Transistor, 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
获取价格 |