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2N6550

更新时间: 2024-01-27 01:46:52
品牌 Logo 应用领域
INTERFET 晶体小信号场效应晶体管放大器
页数 文件大小 规格书
1页 96K
描述
N-Channel Silicon Junction Field-Effect Transistor

2N6550 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
包装说明:CYLINDRICAL, O-MBCY-W3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.36
Is Samacsys:N配置:SINGLE
最小漏源击穿电压:20 VFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):20 pFJEDEC-95代码:TO-46
JESD-30 代码:O-MBCY-W3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2N6550 数据手册

  
01/99  
B-27  
2N6550  
N-Channel Silicon Junction Field-Effect Transistor  
Absolute maximum ratings at T =25¡C  
¥ Low-Noise, High Gain Amplifier  
A
Reverse Gate Source & Reverse Gate Drain Voltage  
Continuious Forward Gate Current  
Continuous Device Power Dissipation  
Power Derating  
– 20 V  
50 mA  
400 mW  
2.3 mW/°C  
Junction Temperature (Operating & Storage)  
– 65°C to +200°C  
At 25°C free air temperature:  
Static Electrical Characteristics  
2N6550  
Typ  
Process NJ450L  
Test Conditions  
I = 10 µA, V = ØV  
Min  
Max  
Unit  
Gate Source Breakdown Voltage  
Gate Leakage Current  
V
– 20  
V
nA  
µA  
mA  
V
(BR)GSS  
G
DS  
– 3  
– 0.1  
250  
– 3  
V
= – 10V, V = ØV  
GS  
DS  
I
GSS  
V
= – 10V, V = ØV  
T = 85°C  
GS  
DS  
A
Zero Gate Voltage Drain Current (Pulsed)  
Gate Source Cutoff Voltage  
I
10  
100  
V
= 10V, V = Ø V  
DSS  
DS  
GS  
V
– 0.3  
V
= 10V, I = 0.1 mA  
GS(OFF)  
DS  
D
Dynamic Electrical Characteristics  
Transconductance  
g
25  
150  
150  
35  
20  
2
mS  
µS  
V
= 10V, I = 10 mA  
f = 1 kHz  
f = 1 kHz  
f = 140 kHz  
f = 140 kHz  
f = 1 kHz  
f = 10 Hz  
fs  
DS  
D
Common Source Output Conductance  
Common Source Input Capacitance  
Common Source Reverse Transfer Capacitance  
|Y |  
V
= 10V, I = 10 mA  
os  
DS  
D
C
30  
10  
pF  
V
= 10V, I = 10 mA  
iss  
DS  
D
C
pF  
V
= 10V, V = ØV  
rss  
DS  
DS  
1.4  
nV/Hz  
nV/Hz  
V
= 5V, I = 10 mA  
DS  
D
e¯  
N
V
= 5V, I = 10 mA  
Equivalent Short Circuit  
Input Noise Voltage  
DS  
D
6
10  
f = 10 kHz  
to 20 kHz  
e¯ Total  
N
0.4  
0.6  
µVrms  
V
= 5V, I = 10 mA  
DS  
D
¯
Equivalent Open Circuit Input Noise Current  
i
0.1  
pA/Hz R < 100 K  
f = 1 kHz  
S
N
TOÐ46 Package  
Dimensions in Inches (mm)  
Pin Configuration  
1 Drain, 2 Source, 3 Gate & Case  
1000 N. Shiloh Road, Garland, TX 75042  
(972) 487-1287 FAX (972) 276-3375  
www.interfet.com  

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