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2N6453

更新时间: 2024-01-06 13:19:42
品牌 Logo 应用领域
INTERFET 晶体小信号场效应晶体管
页数 文件大小 规格书
1页 96K
描述
N-Channel Silicon Junction Field-Effect Transistor

2N6453 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.68Is Samacsys:N
FET 技术:JUNCTIONJESD-609代码:e0
最高工作温度:200 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.36 W子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

2N6453 数据手册

  
B-26  
01/99  
2N6453, 2N6454  
N-Channel Silicon Junction Field-Effect Transistor  
Absolute maximum ratings at T = 25¡C  
¥ Audio Amplifiers  
¥ Low-Noise, High Gain  
Amplifiers  
A
2N6453  
– 20 V  
– 20 V  
10 mA  
360 mW  
2N6454  
– 25 V  
– 25 V  
10 mA  
360 mW  
Reverse Gate Source Voltage  
Reverse Gate Drain Voltage  
Continuous Forward Gate Current  
Continuous Device Power Dissipation  
Power Derating  
¥ Low-Noise Preamplifiers  
2.88 mW/°C 2.88 mW/°C  
At 25°C free air temperature:  
Static Electrical Characteristics  
2N6453  
2N6454  
Process NJ132L  
Test Conditions  
Min Max Min Max Unit  
Gate Source Breakdown Voltage  
V
– 20  
– 25  
V
nA  
I = – 1 µA, V = ØV  
G DS  
(BR)GSS  
– 0.1  
– 0.2  
V
= – 10V, V = ØV  
GS  
DS  
– 0.5 nA  
µA  
V
= – 15V, V = ØV  
GS  
DS  
Gate Reverse Current  
I
GSS  
V
= – 10V, V = ØV  
T = 125°C  
GS  
DS  
A
– 1  
– 0.75 – 5 – 0.75 – 5  
µA  
V
V
= – 15V, V = ØV  
T = 125°C  
GS  
DS  
A
Gate Source Cutoff Voltage  
V
V
= 10V, I = 0.5 nA  
GS(OFF)  
DS  
D
Drain Saturation Current (Pulsed)  
I
15  
50  
15  
50  
mA  
V
= 10V, V = ØV  
DSS  
DS  
GS  
Dynamic Electrical Characteristics  
mS  
mS  
µS  
V
= 10V, I = 5 mA  
f = 1 kHz  
f = 1 kHz  
f = 1 kHz  
f = 1 kHz  
f = 1 kHz  
f = 1 kHz  
f = 1 kHz  
f = 1 kHz  
f = 10 kHz  
f = 1 kHz  
Common Source  
Forward Transmittance  
DS  
D
| Y |  
fs  
20  
40  
100  
25  
20  
40  
V
= 10V, I = 15 mA  
DS  
D
V
= 10V, I = 5 mA  
Common Source  
Output Conductance  
DS  
D
| Y |  
os  
100 µS  
pF  
V
= 10V, I = 15 mA  
DS  
D
V
= 10V, I = 5 mA  
Common Source  
Input Capacitance  
DS  
D
C
iss  
25  
pF  
pF  
pF  
V
= 10V, I = 15 mA  
DS  
D
V
= 10V, I = 5 mA  
Common Source Reverse  
Transfer Capacitance  
DS  
D
C
rss  
5
5
3
5
V
= 10V, I = 15 mA  
DS  
D
10 nV/Hz  
V
= 10V, I = 5 mA  
Equivalent Short Circuit  
Input Noise Voltage  
DS  
D
e¯  
N
8
nV/Hz  
V
= 10V, I = 5 mA  
DS  
D
I = 5 mA  
= 10V,  
D
V
DS  
Noise Figure  
NF  
1.5  
2.5  
dB  
f = 10 Hz  
R = 10 kΩ  
G
TOÐ72 Package  
Dimensions in Inches (mm)  
Pin Configuration  
1 Source, 2 Drain, 3 Gate, 4 Case  
1000 N. Shiloh Road, Garland, TX 75042  
(972) 487-1287 FAX (972) 276-3375  
www.interfet.com  

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