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2N3957 PDF预览

2N3957

更新时间： 2024-01-26 08:13:51

品牌	Logo	应用领域
INTERFET		晶体小信号场效应晶体管放大器
页数	文件大小	规格书
1页	68K
描述
N-Channel Dual Silicon Junction Field-Effect Transistor

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技术参数
数据手册

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2N3957 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
FET 技术：	JUNCTION	最高工作温度：	200 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.5 W
子类别：	FET General Purpose Small Signal	表面贴装：	NO
Base Number Matches：	1

2N3957 数据手册

B-6

01/99

2N3957, 2N3958

N-Channel Dual Silicon Junction Field-Effect Transistor

Absolute maximum ratings at T = 25¡C

¥ Low and Medium Frequency

Differential Amplifiers

¥ High Input Impedance

Amplifiers

A

Reverse Gate Source & Reverse Gate Drain Voltage

– 50 V

50 mA

250 mW

500 mW

4.3 mW/°C

Gate Current

Total Device Power Dissipation (each side)

@ 85°C Case Temperature (both sides)

Power Derating (both sides)

At 25°C free air temperature:

Static Electrical Characteristics

2N3957

2N3958

Process NJ16

Test Conditions

I = – 1 µA, V = ØV

Min Max Min Max Unit

Gate Source Breakdown Voltage

V

– 50

– 50

V

– 100 pA

– 500 nA

– 50 pA

– 250 nA

(BR)GSS

G

DS

– 100

– 500

– 50

V

= – 30V, V = ØV

GS

DS

Gate Reverse Current

I

GSS

V

= – 30V, V = ØV

T = 125°C

A

GS

DS

V

= 20V, I = 200 µA

DS

D

Gate Operating Current

Gate Source Voltage

I

G

– 250

– 4.2

V

= 20V, I = 200 µA

T = 125°C

DS

D

A

– 4.2

V

V

V

= 20V, I = 50 µA

DS

D

V

GS

– 0.5 – 4 – 0.5 – 4

– 1 – 4.5 – 1 – 4.5

V

= 20V, I = 200 µA

DS

D

Gate Source Cutoff Voltage

V

V

V

= 20V, I = 1 nA

GS(OFF)

DS

D

Gate Source Forward Voltage

Drain Saturation Current (Pulsed)

V

2

5

2

5

V

V

= Ø, I = 1 mA

GS(F)

DS

G

I

0.5

0.5

mA

V

= 20V, V = ØV

DSS

DS

GS

Dynamic Electrical Characteristics

1000 3000 1000 3000 µS

V

= 20V, V = ØV

f = 1 kHz

Common Source

Forward Transconductance

DS

GS

g

g

fs

1000

1000

µS

µS

pF

pF

V

= 20V, V = ØV

f = 200 MHz

f = 1 kHz

DS

GS

Common Source Output Conductance

Common Source Input Capacitance

Drain Gate Capacitance

35

4

35

4

V

= 20V, V = ØV

os

DS

GS

C

V

= 20V, V = ØV

f = 1 MHz

f = 1 MHz

iss

DS

GS

C

1.5

1.5

V

= 10V, I = ØA

dgo

DS

S

Common Source

C

1.2

0.5

1.2

0.5

pF

V

= 20V, V = ØV

f = 1 MHz

f = 100 Hz

rss

DS

GS

Reverse Transfer Capacitance

V

= 20V, V = ØV

DS

GS

Noise Figure

NF

dB

nA

R = 10MΩ

G

Differential Gate Current

| I – I

|

10

1

10

1

V

= 20V, I = 200 µA

T = 125°C

G1

G2

DS

D

A

Saturation Drain Current Ratio

Differential Gate Source Voltage

I

/ I

0.9

0.9

0.85

0.85

V

= 20V, V = ØV

DSS1 DSS2

| V – V

DS

GS

|

GS2

20

25

mV

mV

V

= 20V, I = 200 µA

GS1

DS

D

T = 25°C

A

6

8

V

= 20V, I = 200 µA

DS

D

to – 55°C

∆V – V

Differential Gate Source

Voltage with Temperature

GS1 GS2

∆T

T = 25°C

A

7.5

1

10

1

mV

V

= 20V, I = 200 µA

DS

D

to 125°C

Transconductance Ratio

g

/ g

V

= 20V, I = 200 µA

f = 1 kHz

fs1 fs2

DS

D

TOÐ71 Package

See Section G for Outline Dimensions

Pin Configuration

1 Source, 2 Drain, 3 Gate, 5 Source,

6 Drain, 7 Gate

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

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