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RD28F6408W30T70 PDF预览

RD28F6408W30T70

更新时间: 2024-01-04 12:52:25
品牌 Logo 应用领域
英特尔 - INTEL 闪存存储内存集成电路静态存储器无线
页数 文件大小 规格书
82页 688K
描述
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)

RD28F6408W30T70 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:LFBGA,针数:80
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.81Is Samacsys:N
其他特性:SRAM IS CONFIGURED AS 512K X 16JESD-30 代码:R-PBGA-B80
长度:14 mm内存密度:67108864 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:16
功能数量:1端子数量:80
字数:4194304 words字数代码:4000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:LFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH
认证状态:Not Qualified座面最大高度:1.4 mm
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM宽度:8 mm
Base Number Matches:1

RD28F6408W30T70 数据手册

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1.8 Volt Intel® Wireless Flash Memory  
with 3 Volt I/O and SRAM (W30)  
28F6408W30, 28F3204W30, 28F320W30, 28F640W30  
Preliminary Datasheet  
Product Features  
Flash Performance  
Flash Architecture  
70 ns Initial Access Speed  
25 ns Page-Mode Read Speed  
20 ns Burst-Mode Read Speed  
Burst and Page Mode in All Blocks and  
across All Partition Boundaries  
Enhanced Factory Programming:  
3.5 µs per Word Program Time  
Programmable WAIT Signal Polarity  
Flash Power  
Multiple 4-Mbit Partitions  
Dual Operation: RWW or RWE  
Parameter Block Size = 4-Kword  
Main block size = 32-Kword  
Top and Bottom Parameter Devices  
Flash Security  
128-bit Protection Register: 64 Unique Device  
Identifier Bits; 64 User OTP Protection  
Register Bits  
Absolute Write Protection with V at Ground  
Program and Erase Lockout during Power  
Transitions  
V = 1.70 V 1.90 V  
CC  
CCQ  
PP  
V  
= 2.20 V 3.30 V  
Standby Current = 6 µA (typ.)  
Read Current = 7 mA  
Individual and Instantaneous Block Locking/  
Unlocking with Lock-Down  
(4 word burst, typ.)  
Flash Software  
SRAM  
5/9 µs (typ.) Program/Erase Suspend Latency  
Time  
70 ns Access Speed  
16-bit Data Bus  
Intel® Flash Data Integrator (FDI) and  
Common Flash Interface (CFI) Compatible  
Quality and Reliability  
Operating Temperature:  
25 °C to +85 °C  
Low Voltage Data Retention  
S-V = 2.20 V 3.30 V  
CC  
Density and Packaging  
32-Mbit Discrete in VF BGA Package  
64-Mbit Discrete in µBGA* Package  
56 Active Ball Matrix, 0.75 mm Ball-Pitch in  
µBGA* and VF BGA Packages  
32/4-, 64/8- and 128/TBD- Mbit (Flash +  
SRAM) in a 80-Ball Stacked-CSP Package (14  
mm x 8 mm)  
100K Minimum Erase Cycles  
0.18 µm ETOXVII Process  
16-bit Data Bus  
The 1.8 Volt Intel®Wireless Flash Memory with 3 Volt I/O combines state-of-the-art Intel® Flash technology with  
low power SRAM to provide the most versatile and compact memory solution for high performance, low power,  
board constraint memory applications.  
The 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O offers a multi-partition, dual-operation flash  
architecture that enables the device to read from one partition while programming or erasing in another partition.  
This Read-While-Write or Read-While-Erase capability makes it possible to achieve higher data throughput rates  
as compared to single partition devices and it allows two processors to interleave code execution because  
program and erase operations can now occur as background processes.  
The 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O incorporates a new Enhanced Factory Programming  
(EFP) mode to improve 12 V factory programming performance. This new feature helps eliminate manufacturing  
bottlenecks associated with programming high density flash devices. Compare the EFP program time of 3.5 µs  
per word to the standard factory program time of 8.0 µs per word and save significant factory programming time  
for improved factory efficiency.  
Additionally, the 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O includes block lock-down, programmable  
WAIT signal polarity and is supported by an array of software tools. All these features make this product a perfect  
solution for any demanding memory application.  
Notice: This document contains preliminary information on new products in production. The  
specifications are subject to change without notice. Verify with your local Intel sales office that  
you have the latest datasheet before finalizing a design.  
290702-002  
March 2001  

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