Datasheet > 28F016XD

28F016XD

更新时间： 2022-11-25 16:12:58

品牌	Logo	应用领域
英特尔 - INTEL		存储动态存储器
页数	文件大小	规格书
54页	1156K
描述
16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY

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28F016XD 数据手册

28F016XD

16-MBIT (1 MBIT x 16)

DRAM-INTERFACE FLASH MEMORY

85 ns Access Time (t_RAC

)

56-Lead TSOP Type I Package

Supports both Standard and Fast-

Page-Mode Accesses

Backwards-Compatible with 28F008SA

Command Set

Multiplexed Address Bus

2 µA Typical Deep Power-Down Current

RAS# and CAS# Control Inputs

1 mA Typical I_CCActive Current in Static

Mode

No-Glue Interface to Many Memory

Controllers

32 Separately-Erasable/Lockable

64-Kbyte Blocks

SmartVoltage Technology

User-Selectable 3.3V or 5V V_CC

User-Selectable 5V or 12V V_PP

1 Million Erase Cycles per Block

State-of-the-Art 0.6 µm ETOX™ IV Flash

Technology

0.33 MB/sec Write Transfer Rate

x16 Architecture

Intel’s 28F016XD 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing

truly revolutionary high-performance products. Combining its DRAM-like read performance and interface with

the intrinsic nonvolatility of flash memory, the 28F016XD eliminates the traditional redundant memory

paradigm of shadowing code from a slow nonvolatile storage source to a faster execution memory, such as

DRAM, for improved system performance. The innovative capabilities of the 28F016XD enable the design of

direct-execute code and mass storage data/file flash memory systems.

The 28F016XD’s DRAM-like interface with a multiplexed address bus, flexible V_CCand V_PPvoltages, power

saving features, extended cycling, fast program and read performance, symmetrically-blocked architecture,

and selective block locking provide a highly flexible memory component suitable for resident flash component

arrays on the system board or SIMMs. The DRAM-like interface with RAS# and CAS# control inputs allows

for easy migration to flash memory in existing DRAM-based systems. The 28F016XD’s dual read voltage

allows the same component to operate at either 3.3V or 5.0V V_CC. Programming voltage at 5.0V V_PP

minimizes external circuitry in minimal-chip, space critical designs, while the 12.0V V_PPoption maximizes

program/erase performance. The x16 architecture allows optimization of the memory-to-processor interface.

Its high read performance combined with flexible block locking enable both storage and execution of

operating systems/application software and fast access to large data tables. The 28F016XD is manufactured

on Intel’s 0.6 µm ETOX IV process technology.

December 1996

Order Number: 290533-004

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