28F010
1024K (128K x 8) CMOS FLASH MEMORY
Y
Y
Y
Flash Electrical Chip-Erase
Ð 1 Second Typical Chip-Erase
Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
Quick Pulse Programming Algorithm
Ð 10 ms Typical Byte-Program
Ð 2 Second Chip-Program
Y
Y
Y
Noise Immunity Features
g
Ð Maximum Latch-Up Immunity
Ð
10% V
Tolerance
CC
Y
Y
Y
100,000 Erase/Program Cycles
through EPI Processing
g
12.0V 5% V
PP
ETOXTM Nonvolatile Flash Technology
Ð EPROM-Compatible Process Base
Ð High-Volume Manufacturing
Experience
High-Performance Read
Ð 65 ns Maximum Access Time
Y
CMOS Low Power Consumption
Ð 10 mA Typical Active Current
Ð 50 mA Typical Standby Current
Ð 0 Watts Data Retention Power
JEDEC-Standard Pinouts
Ð 32-Pin Plastic Dip
Ð 32-Lead PLCC
Ð 32-Lead TSOP
(See Packaging Spec., Order 231369)
Y
Integrated Program/Erase Stop Timer
Ý
Y
Extended Temperature Options
Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write
random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-
board during subassembly test; in-system during final test; and in-system after-sale. The 28F010 increases
memory flexibility, while contributing to time and cost savings.
The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of 8 bits. Intel’s 28F010 is
offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC
standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel’s ETOX (EPROM Tunnel Oxide) process
technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field combine to
extend reliable cycling beyond that of traditional EEPROMs. With the 12.0V V supply, the 28F010 performs
PP
100,000 erase and program cycles well within the time limits of the Quick Pulse Programming and Quick Erase
algorithms.
Intel’s 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds, low
power consumption, and immunity to noise. Its 65 nanosecond access time provides no-WAIT-state perform-
ance for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 mA trans-
lates into power savings when the device is deselected. Finally, the highest degree of latch-up protection is
achieved through Intel’s unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA
b
on address and data pins, from 1V to V
a
1V.
CC
With Intel’s ETOX process base, the 28F010 builds on years of EPROM experience to yield the highest levels
of quality, reliability, and cost-effectiveness.
*Other brands and names are the property of their respective owners.
Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or
copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make
changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.
©
COPYRIGHT INTEL CORPORATION, 1995
November 1995
Order Number: 290207-010
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