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BSP76 PDF预览

BSP76

更新时间: 2024-02-02 19:10:18
品牌 Logo 应用领域
英飞凌 - INFINEON 外围驱动器驱动程序和接口开关接口集成电路电源开关光电二极管
页数 文件大小 规格书
10页 274K
描述
Smart Lowside Power Switch

BSP76 技术参数

生命周期:Transferred包装说明:,
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.31
Is Samacsys:N内置保护:OVER CURRENT; OVER VOLTAGE; THERMAL
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PDSO-G4
功能数量:1端子数量:4
输出电流流向:SINK封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified标称供电电压:42 V
表面贴装:YES技术:MOS
端子形式:GULL WING端子位置:DUAL
断开时间:150 µs接通时间:150 µs
Base Number Matches:1

BSP76 数据手册

 浏览型号BSP76的Datasheet PDF文件第2页浏览型号BSP76的Datasheet PDF文件第3页浏览型号BSP76的Datasheet PDF文件第4页浏览型号BSP76的Datasheet PDF文件第5页浏览型号BSP76的Datasheet PDF文件第6页浏览型号BSP76的Datasheet PDF文件第7页 
HITFET II.Generation BSP 76  
Smart Lowside Power Switch  
Features  
Product Summary  
S Logic Level Input  
S Input Protection (ESD)  
S Thermal shutdown with  
auto restart  
Drain source voltage  
On-state resistance  
Nominal load current  
Clamping energy  
V
R
42  
200 mꢀ  
1.4  
V
DS  
DS(on)  
I
A
D(Nom)  
E
150 mJ  
AS  
S Overload protection  
S Short circuit protection  
S Overvoltage protection  
S Current limitation  
S Analog driving possible  
4
3
2
1
VPS05163  
Application  
S All kinds of resistive, inductive and capacitive loads in switching  
or linear applications  
S µC compatible power switch for 12 V DC applications  
S Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded  
protection functions.  
Vbb  
M
Drain  
HITFET  
Pin 2 and 4 (TAB)  
Current  
Overvoltage-  
Protection  
Limitation  
In  
Gate-Driving  
Unit  
Pin 1  
Over-  
Overload  
Short circuit  
Protection  
temperature  
Protection  
ESD  
Protection  
Pin 3  
Source  
Complete product spectrum and additional information http://www.infineon.com/hitfet  
Page 1  
2004-03-05  

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