Datasheet > 6ED003L06F2XUMA2

6ED003L06F2XUMA2

更新时间： 2024-01-15 10:51:03

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动接口集成电路
页数	文件大小	规格书
19页	663K
描述
Half Bridge Based MOSFET Driver,

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6ED003L06F2XUMA2 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.69	接口集成电路类型：	HALF BRIDGE BASED MOSFET DRIVER
Base Number Matches：	1

6ED003L06F2XUMA2 数据手册

6ED003-F2 family

6ED003L02-F2 and 6ED003L06-F2 family

200 V and 600 V three-phase gate driver with Over Current Protection (OCP),

Enable (EN) and Fault

Features

Product summary

V_OFFSET(6ED003L06-F2) = 620 V max.

V_OFFSET(6ED003L02-F2) = 200 V max.

•

Infineon thin-film-SOI-technology

Maximum blocking voltage +600 V

Output source/sink current +0.165 A/-0.375 A

Insensitivity of the bridge output to negative

transient voltages up to -50 V given by SOI-

technology

I_O+/-(typ.)

= +0.165 A / -0.375 A

t_on/ t_off

= 530ns / 490 ns

t_f/t_r(typ. C_L=1 nF)

= 60 ns / 26 ns

•

Separate control circuits for all six drivers

Detection of over current and under voltage supply

Externally programmable delay for fault clear after

over current detection

Package

DSO-28

•

'Shut down' of all switches during error conditions

Signal interlocking of every phase to prevent cross-

conduction

TSSOP-28

Potential applications

•

Home appliance, refrigeration compressors, air-conditioning

Fans, pumps

Motor drives, general purpose inverters

Power tools, light electric vehicles

Product validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Description

The devices are full bridge drivers to control power devices like MOSFET or IGBTs in 3-phase systems with a

maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent ruggedness on

transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may

occur at all temperatures and voltage conditions.

The six independent drivers are controlled at the low-side using CMOS resp. LSTTL compatible signals, down to

3.3 V logic. The device includes an under-voltage detection unit with hysteresis characteristic and an over-

current detection. The over-current level is adjusted by choosing the resistor value and the threshold level at

pin ITRIP. Both error conditions (under-voltage and over-current) lead to a definite shut down of all six

switches. An error signal is provided at the FAULT open drain output pin. The blocking time after over-current

can be adjusted with an RC-network at pin RCIN. The input RCIN owns an internal current source of 2.8 µA.

Therefore, the resistor R_RCINis optional. The typical output current can be given with 165 mA for pull-up and 375

mA for pull down. Because of system safety reasons a 310 ns interlocking time has been realised. The function

of input EN can optionally be extended with over-temperature detection, using an external NTC-resistor (see

Figure 1).

6ED003-F2 family Datasheet Please read the Important Notice and Warnings at the end of this document

www.infineon.com/gdThreePhase 1 of 19

Version 2.9

2019-03-21

12 3 4 5 6 7...19

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