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56DN06B01ELEMXPSA1 PDF预览

56DN06B01ELEMXPSA1

更新时间: 2024-02-12 19:04:01
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
8页 197K
描述
Rectifier Diode, 1 Phase, 1 Element, 8400A, 600V V(RRM), Silicon,

56DN06B01ELEMXPSA1 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:10 weeks
风险等级:5.68应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.98 V
JESD-30 代码:O-XXSS-X2最大非重复峰值正向电流:70000 A
元件数量:1相数:1
端子数量:2最高工作温度:180 °C
最低工作温度:-40 °C最大输出电流:8400 A
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:SPECIAL SHAPE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:600 V最大反向电流:100000 µA
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UNSPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

56DN06B01ELEMXPSA1 数据手册

 浏览型号56DN06B01ELEMXPSA1的Datasheet PDF文件第2页浏览型号56DN06B01ELEMXPSA1的Datasheet PDF文件第3页浏览型号56DN06B01ELEMXPSA1的Datasheet PDF文件第4页浏览型号56DN06B01ELEMXPSA1的Datasheet PDF文件第5页浏览型号56DN06B01ELEMXPSA1的Datasheet PDF文件第6页浏览型号56DN06B01ELEMXPSA1的Datasheet PDF文件第7页 
Technische Informationen /  
technical information  
N
Kenndaten  
Netz-Gleichrichterdiode  
Rectifier Diode  
56DN06B01  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
Periodische Spitzensperrspannung  
Tvj = -40°C... Tvj max  
Tvj = +25°C... Tvj max  
VRRM  
VRSM  
IFRMSM  
IFAVM  
IFAVM  
IFRMS  
400 V  
600 V  
repetitive peak reverse voltages  
Stoßspitzensperrspannung  
non-repetitive peak reverse voltage  
450 V  
650 V  
Durchlaßstrom-Grenzeffektivwert  
maximum RMS on-state current  
13200 A  
tp 5ms  
Dauergrenzstrom  
average on-state current  
TC = 110 °C  
8400 A  
TC = 100 °C, θ = 180°sin, tP = 10 ms  
A
A
A
A
Dauergrenzstrom  
average on-state current  
9200  
14450  
12170  
19120  
Durchlaßstrom-Effektivwert  
RMS on-state current  
TC = 55 °C, θ = 180°sin, tP = 10 ms  
IFAVM  
IFRMS  
Dauergrenzstrom  
average on-state current  
Durchlaßstrom-Effektivwert  
RMS on-state current  
Stoßstrom-Grenzwert  
surge current  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
IFSM  
I²t  
81000 A  
70000 A  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
32800 A²s*10³  
24500 A²s*10³  
Thermische Eigenschaften  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
on-state voltage  
Tvj = Tvj max , iF = 8 kA  
vF  
max.  
max.  
max.  
0,98 V  
0,66 V  
Schleusenspannung  
threshold voltage  
Tvj = Tvj max  
V(TO)  
rT  
Ersatzwiderstand  
slope resistance  
Tvj = Tvj max  
0,037 mΩ  
Tvj = Tvj max  
A=  
B=  
C=  
D=  
4,269E-01  
Durchlaßkennlinie  
on-state characteristic  
2000 A ≤ iF ≤ 42000 A  
1,851E-05  
6,879E-03  
3,874E-03  
vF A B iF C ln (iF 1) D iF  
Sperrstrom  
Tvj = Tvj max , vR = VRRM  
iR  
max.  
100 mA  
reverse current  
Thermische Eigenschaften / Thermal properties  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
Kühlfläche / cooling surface  
beidseitig / two-sided, θ = 180°sin  
beidseitig / two-sided, DC  
RthJC  
max.  
max.  
5,8 K/kW  
5,2 K/kW  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
Kühlfläche / cooling surface  
beidseitig / two-sided  
RthCH  
Tvj max  
Tc op  
Tstg  
max.  
2,5 K/kW  
180 °C  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
Betriebstemperatur  
operating temperature  
-40...+180 °C  
-40...+180 °C  
Lagertemperatur  
storage temperature  
prepared by: HR  
approved by: ML  
date of publication: 2013-08-07  
revision: 3.1  
Date of publication: 2013-08-07  
Seite/page  
1/8  
Revision: 3.1  

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