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4N39

更新时间： 2024-01-26 14:07:21
品牌 Logo 应用领域
英飞凌 - INFINEON 可控硅
页数 文件大小 规格书
1页 25K
描述
PHOTO SCR OPTOCOUPLER

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4N39 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：PLASTIC, DIP-6
Reach Compliance Code：compliantHTS代码：8541.40.80.00
风险等级：5.74其他特性：UL RECOGNIZED, VDE APPROVED
配置：SINGLE最大正向电流：0.06 A
标称输入触发电流：30 mA最大绝缘电压：5300 V
元件数量：1最大通态电流：0.3 A
最高工作温度：100 °C最低工作温度：-55 °C
光电设备类型：SCR OUTPUT OPTOCOUPLERBase Number Matches：1

4N39 数据手册

  
4N39  
PHOTO SCR OPTOCOUPLER  
FEATURES  
• Turn On Current (I ), 5.0 mA Typical  
Package Dimensions in Inches (mm)  
FT  
• Gate Trigger Current (I ), 20 mA  
• Surge Anode Current, 10 Amp  
GT  
Pin One ID.  
2
1
3
1
2
3
6
5
4
Gate  
Anode  
• Blocking Voltage, 200 VAC  
PK  
• Gate Trigger Voltage (V ), 0.6 Volt  
.248 (6.30)  
.256 (6.50)  
GT  
Cathode  
NC  
Anode  
Cathode  
• Isolation Voltage, 5300 VAC  
• Solid State Reliability  
• Standard DIP Package  
RMS  
4
5
6
.335 (8.50)  
.343 (8.70)  
• Underwriters Lab File #E52744  
.300 (7.62)  
typ.  
.039  
(1.00)  
min.  
DESCRIPTION  
The 4N39 is an optically coupled SCR with a Gal-  
lium Arsenide infrared emitter and a silicon photo  
SCR sensor. Switching can be achieved while  
maintaining a high degree of isolation between  
triggering and load circuits. The 4N39 can be used  
in SCR triac and solid state relay applications  
where high blocking voltages and low input current  
sensitivity are required.  
.130 (3.30)  
.150 (3.81)  
4°  
typ.  
18° typ.  
.110 (2.79)  
.150 (3.81)  
.020 (.051) min.  
.010 (.25)  
.014 (.35)  
.031 (0.80)  
.035 (0.90)  
.018 (0.45)  
.022 (0.55)  
.300 (7.62)  
.347 (8.82)  
.100 (2.54) typ.  
Characteristics (T =25°C)  
A
Maximum Ratings  
Sym- Min. Typ Max Unit Condition  
Emitter  
bol  
.
.
Peak Reverse Voltage ....................................6.0 V  
Peak Forward Current  
Emitter  
Forward Voltage  
Reverse Current  
Detector  
V
1.2  
1.5  
10  
V
I =20 mA  
F
(100 µs, 1% Duty Cycle)............................. 1.0 A  
Continuous Forward Current ........................ 60 mA  
Power Dissipation at 25°C..........................100 mW  
Derate Linearly from 50°C .........................2 mW/°C  
Detector  
Reverse Gate Voltage .....................................6.0 V  
Anode Peak Blocking Voltage .......................200 V  
Peak Reverse Gate Voltage ...............................6 V  
Anode Current............................................ 300 mA  
Surge Anode Current (100 µs duration).......... 10 A  
Surge Gate Current (5 ms duration)........... 100 mA  
Power Dissipation, 25°C ambient ..............400 mW  
Derate Linearly from 25°C .........................8 mW/°C  
Package  
F
I
µA  
V =5 V  
R
R
Forward Blocking  
Voltage  
V
200  
200  
V
V
R
=10 KΩ  
DM  
GK  
T =100°C  
A
I =150 µA  
d
Reverse Blocking  
Voltage  
V
RM  
On-state Voltage  
Holding Current  
V
1.2  
V
I
=300 mA  
TM  
TM  
I
200  
µA  
R
=27 KΩ  
=50 V  
H
GK  
V
FX  
Gate Trigger  
Voltage  
V
0.6  
1.0  
50  
V
V
=100 V  
=27 KΩ  
GT  
FX  
R
GK  
R =10 KΩ  
L
Isolation Test Voltage (1 sec.) .......... 5300 VAC  
Forward Leakage  
Current  
I
µA  
R
=10 KΩ  
=200 V  
RMS  
DM  
GK  
V
Isolation Resistance  
RX  
12  
I =0,  
V =500 V, T =25°C ...............................≥10  
Ω
Ω
F
IO  
A
11  
T =100°C  
A
V =500 V, T =100°C .............................≥10  
IO  
A
Reverse Leakage  
Current  
I
50  
µA  
R
=27 KΩ  
=200 V  
Total Package Dissipation ..........................450 mW  
Derate Linearly from 50°C .........................9 mW/°C  
Operating Temperature ................–55°C to +100°C  
Storage Temperature ....................–55°C to +150°C  
Soldering Temperature (10 s.).......................260°C  
RM  
GK  
V
RX  
I =0,  
F
T =100°C  
A
Package  
Turn-0n Current  
I
15  
8
30  
14  
mA  
pF  
V =50 V  
FX  
GK  
FT  
R
=10 KΩ  
V
=100 V  
=27 KΩ  
FX  
R
GK  
Isolation Capaci-  
tance  
2
f=1 MHz  
5–36  
1

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