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38DN06 PDF预览

38DN06

更新时间: 2024-01-25 11:43:46
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管
页数 文件大小 规格书
7页 178K
描述
Netz-Gleichrichterdiode Rectifier Diode

38DN06 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.74Is Samacsys:N
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-CEDB-N2最大非重复峰值正向电流:32300 A
元件数量:1相数:1
端子数量:2最大输出电流:3885 A
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大重复峰值反向电压:600 V表面贴装:YES
端子形式:NO LEAD端子位置:END
Base Number Matches:1

38DN06 数据手册

 浏览型号38DN06的Datasheet PDF文件第2页浏览型号38DN06的Datasheet PDF文件第3页浏览型号38DN06的Datasheet PDF文件第4页浏览型号38DN06的Datasheet PDF文件第5页浏览型号38DN06的Datasheet PDF文件第6页浏览型号38DN06的Datasheet PDF文件第7页 
Datenblatt / Data sheet  
N
Netz-Gleichrichterdiode  
Rectifier Diode  
38DN06  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / maximum rated values  
VRRM  
IFRMSM  
IFAVM  
IFSM  
600 V  
6100 A  
3885 A  
Tvj = -40°C... Tvj max  
PeriodischeSpitzensperrspannung  
repetitive peak reverse voltages  
Durchlaßstrom-Grenzeffektivwert  
maximum RMS on-state current  
TC = 120 °C  
Dauergrenzstrom  
average on-state current  
Stoßstrom-Grenzwert  
surge current  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
37400 A  
32300 A  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
I²t  
7000 10³A²s  
5200 10³A²s  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
on-state voltage  
Schleusenspannung  
threshold voltage  
Ersatzwiderstand  
slope resistance  
Tvj = Tvj max , iF = 4,5 kA  
Tvj = Tvj max  
vF  
max.  
0,95 V  
0,66 V  
V(TO)  
rT  
m  
0,06  
Tvj = Tvj max  
Tvj = Tvj max  
A=  
B=  
C=  
D=  
-3,502E-02  
7,865E-05  
1,337E-01  
-7,354E-03  
Durchlaßkennlinie  
2000 A iF 19000 A  
on-state characteristic  
vF = A + B iF + C ln ( iF + 1 ) + D  
iF  
max.  
Sperrstrom  
Tvj = Tvj max , vR = VRRM  
iR  
50 mA  
reverse current  
Thermische Eigenschaften / Thermal properties  
Kühlfläche / cooling surface  
beidseitig / two-sided, θ = 180°sin  
beidseitig / two-sided, DC  
RthJC  
Innerer Wärmewiderstand  
max. 0,0124 °C/W  
max. 0,0110 °C/W  
thermal resistance, junction to case  
Kühlfläche / cooling surface  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
RthCH  
Tvj max  
Tc op  
Tstg  
0,0050  
180  
°C/W  
°C  
beidseitig / two-sided  
max.  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
Betriebstemperatur  
operating temperature  
-40...+180 °C  
-40...+180 °C  
Lagertemperatur  
storage temperature  
Mechanische Eigenschaften / Mechanical properties  
Gehäuse, siehe Anlage  
Seite 2  
page 2  
case, see annex  
Si-Element mit Druckkontakt  
Si-pellet with pressure contact  
Anpreßkraft  
clamping force  
Gewicht  
weight  
20...30  
60  
F
kN  
g
G
typ.  
50 m/s²  
Schwingfestigkeit  
vibration resistance  
f = 50 Hz  
prepared by: H.Sandmann  
approved by: M.Leifeld  
date of publication: 2011-02-17  
revision: 3.0  
Seite/page  
IFBIP D AEC/ 2011-02-17, H.Sandmann  
A 03/11  
1/7  

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