Datasheet > 2PS06017E32G28213NOSA1

2PS06017E32G28213NOSA1

更新时间： 2024-02-14 00:35:30

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
7页	490K
描述
Insulated Gate Bipolar Transistor,

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技术参数
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2PS06017E32G28213NOSA1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.9
Base Number Matches：	1

2PS06017E32G28213NOSA1 数据手册

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TechnicalꢀInformation

PrimeSTACK™

2PS06017E32G28213

Preliminaryꢀdata

ꢀ

Keyꢀdata

1xꢀ325AꢀACꢀatꢀ690VꢀAC,ꢀforcedꢀairꢀ(fanꢀnotꢀimplemented)

Generalꢀinformation

Stacksꢀforꢀvariousꢀinverterꢀapplication.ꢀSemiconductors,ꢀheatꢀsinks,ꢀdriversꢀandꢀsensorsꢀincluded.

Theseꢀareꢀonlyꢀtechnicalꢀdataꢁ

Pleaseꢀreadꢀcarefullyꢀtheꢀcompleteꢀdocumentationꢀandꢀmaintainꢀtheꢀproperꢀdesignꢀenvironmentꢁ

EspeciallyꢀnoteꢀtheꢀEMCꢀenvironmentꢀandꢀtheꢀcontroller'sꢀfunctionality.

ꢀ

Topology

1/2 B2I

ꢀ

Application / Modulation

Load type

Inverter / Sine

resistive, inductive

Cooling

forced air (fan not implemented)

common industrial, drives, power supply

current, temperature

Market

Implemented sensors

Semicond.

(Unit 1)

none

ꢀ

DC Link

Semicond.

(Unit 2)

IGBT 2x FF300R17KE3

Driver signals IGBT

Standards

electrical CMOS

ꢀ

EN50178, UL94, prepared for UL508C

Internal ID

28213

Mechanical drawing number

Electrical drawing number

38000028

2PS-C2-V

preparedꢀby:ꢀOW

approvedꢀby:ꢀAR

dateꢀofꢀpublication:ꢀ2013-05-03

revision:ꢀ2.0

12 3 4 5 6 7

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