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2N7612M1 PDF预览

2N7612M1

更新时间: 2024-01-20 03:22:13
品牌 Logo 应用领域
英飞凌 - INFINEON 开关晶体管
页数 文件大小 规格书
9页 206K
描述
Small Signal Field-Effect Transistor, 1.8A I(D), 100V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED PACKAGE-14

2N7612M1 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:IN-LINE, R-CDIP-T14Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.38
Is Samacsys:N配置:SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):1.8 A
最大漏极电流 (ID):1.8 A最大漏源导通电阻:0.22 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-036AB
JESD-30 代码:R-CDIP-T14JESD-609代码:e0
元件数量:4端子数量:14
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.4 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N7612M1 数据手册

 浏览型号2N7612M1的Datasheet PDF文件第2页浏览型号2N7612M1的Datasheet PDF文件第3页浏览型号2N7612M1的Datasheet PDF文件第4页浏览型号2N7612M1的Datasheet PDF文件第5页浏览型号2N7612M1的Datasheet PDF文件第6页浏览型号2N7612M1的Datasheet PDF文件第7页 
PRELIMINARY  
PD-97178  
2N7612M1  
RADIATION HARDENED  
IRHLG77110  
LOGIC LEVEL POWER MOSFET  
THRU-HOLE (MO-036AB)  
100V, Quad N-CHANNEL  
TECHNOLOGY  
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHLG77110  
IRHLG73110  
100K Rads (Si) 0.22Ω  
300K Rads (Si) 0.22Ω  
1.8A  
1.8A  
MO-036AB  
International Rectifier’s R7TM Logic Level Power  
MOSFETs provide simple solution to interfacing  
CMOS and TTL control circuits to power devices in  
space and other radiation environments. The  
threshold voltage remains within acceptable  
operating limits over the full operating temperature  
and post radiation. This is achieved while maintaining  
single event gate rupture and single event burnout  
immunity.  
Features:  
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Light Weight  
These devices are used in applications such as  
current boost low signal source in PWM, voltage  
comparator and operational amplifiers.  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 4.5V, T =25°C  
Continuous Drain Current  
1.8  
D
GS  
GS  
C
A
I
D
= 4.5V, T =100°C Continuous Drain Current  
1.1  
7.2  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
1.4  
W
W/°C  
V
D
C
0.01  
±10  
V
Gate-to-Source Voltage  
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
97  
mJ  
A
AS  
I
1.8  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
0.14  
11  
mJ  
V/ns  
AR  
dv/dt  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063in/1.6mm from case for 10s)  
1.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
03/01/11  

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