是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | CYLINDRICAL, O-MBCY-W3 | Reach Compliance Code: | compliant |
风险等级: | 5.69 | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏源导通电阻: | 0.3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-205AF |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 参考标准: | CECC |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N6849EBPBF | INFINEON | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se |
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2N6849EC | INFINEON | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se |
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2N6849ED | INFINEON | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se |
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2N6849EPBF | INFINEON | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se |
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2N6849HP | SEME-LAB | P-CHANNEL POWER MOSFET |
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2N6849PBF | INFINEON | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Met |
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