型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N6798EBPBF | INFINEON | Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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2N6798EC | INFINEON | Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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2N6798ED | INFINEON | Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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2N6798EPBF | INFINEON | Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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2N6798SCC5205/019 | INFINEON | Power Field-Effect Transistor, 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se |
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2N6798TX | RENESAS | 5.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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