Datasheet > 24N60C3

24N60C3

更新时间： 2022-11-25 16:00:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
10页	231K
描述
CoolMOS Power Transistor

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数据手册

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24N60C3 数据手册

SPW24N60C3

CoolMOS^TMPower Transistor

Features

Product Summary

_DS@ T _j,max

R _DS(on),max

I _D

650

Ω

• New revolutionary high voltage technology

• Ultra low gate charge

0.16

24.3

• Periodic avalanche rated

• Extreme dv /dt rated

• Ultra low effective capacitances

• Improved transconductance

P-TO247

Type

Package

Ordering Code Marking

SPW24N60C3

P-TO247

Q67040-S4640

24N60C3

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

24.3

15.4

72.9

780

Continuous drain current

Pulsed drain current¹⁾

I _D,pulse

E _AS

I _D=12.1 A, V _DD=50 V

Avalanche energy, single pulse

1),2)

E _AR

I _AR

I _D=24.3 A, V _DD=50 V

1.5

Avalanche energy, repetitive t _AR

24.3

Avalanche current, repetitive t _AR

Drain source voltage slope

Gate source voltage

I _D=24.3 A,

dv /dt

V/ns

_DS=480 V, T _j=125 °C

V _GS

±20

±30

static

V _GS

AC (f >1 Hz)

T _C=25 °C

P _tot

240

Power dissipation

T _j, T _stg

-55 ... 150

Operating and storage temperature

°C

Rev. 1.0

page 1

2004-04-27

12 3 4 5 6 7...10

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