Datasheet > 11N80C3

11N80C3

更新时间： 2022-12-14 15:17:58

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
13页	677K
描述
Cool MOS™ Power Transistor

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数据手册

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11N80C3 数据手册

SPP11N80C3

SPA11N80C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

800

0.45

Ω

DS(on)

PG-TO220-3-31 PG-TO220

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

P-TO220-3-31

Type

Package

Ordering Code

Marking

SPP11N80C3

PG-TO220

Q67040-S4438

11N80C3

SPA11N80C3

PG-TO220-3-31 SP000216320

11N80C3

Maximum Ratings

Parameter

Symbol

Value

Unit

SPP

SPA

Continuous drain current

T = 25 °C

7.1

T = 100 °C

7.1

Pulsed drain current, t limited by T

D puls

jmax

Avalanche energy, single pulse

470

I =2.2A, V =50V

Avalanche energy, repetitive t limited by T

0.2

jmax

I =11A, V =50V

Avalanche current, repetitive t limited by T

Gate source voltage

±20

jmax

tot

Gate source voltage AC (f >1Hz)

Power dissipation, T = 25°C

156

Operating and storage temperature

-55...+150

°C

stg

Rev. 2.4

Page 1

2005-08-24

12 3 4 5 6 7...13

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