PTF080901
LDMOS RF Power Field Effect Transistor
90 W, 869–960 MHz
Description
Features
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
•
•
Broadband internal matching
Typical EDGE performance
- Average output power = 45 W
- Gain = 18 dB
- Efficiency = 40%
EDGE Modulation Spectrum Performance
•
•
Typical CW performance
- Output power at P–1dB = 120 W
- Gain = 17 dB
VDD = 28 V, IDQ = 700 mA, f = 959.8 MHz
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
55
50
45
40
35
30
25
20
15
10
- Efficiency = 60%
Efficiency
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
•
•
•
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
90 W (CW) output power
400 kHz
600 kHz
PTF080901E
Package 30248
36
38
40
42
44
46
48
50
Output Power (dBm)
PTF080901F
Package 31248
ESD: Electrostatic discharge sensitive device—observe handling precautions!
= 25°C unless otherwise indicated
RF Characteristics at T
CASE
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
= 28 V, I = 700 mA, P = 45 W, f = 959.8 MHz
V
DD
DQ
OUT
Characteristic
Error Vector Magnitude
Symbol
EVM (RMS)
ACPR
Min
—
Typ
2.5
–62
–74
18
Max
—
Unit
%
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
—
—
dBc
dBc
dB
ACPR
—
—
G
ps
—
—
Drain Efficiency
ηD
—
40
—
%
Two–Tone Measurements (tested in Infineon test fixture)
V
DD
= 28 V, I
= 650 mA, P = 90 W PEP, f = 960 MHz, tone spacing = 1 MHz
OUT
DQ
Characteristic
Gain
Symbol
Min
17
Typ
18
Max
—
Unit
dB
G
ps
Drain Efficiency
ηD
40
42
—
%
Intermodulation Distortion
Data Sheet
IMD
—
–32
–29
dBc
1
2004-04-05