IPI04N03LA, IPP04N03LA
OptiMOS®2 Power-Transistor
Product Summary
Features
V DS
25
4.2
80
V
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
R DS(on),max
I D
m:
A
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
PG-TO262-3
PG-TO220-3
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Type
Package
Marking
04N03LA
04N03LA
IPI04N03LA
IPP04N03LA
PG-TO262-3
PG-TO220-3
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
T C=25 °C2)
I D
Continuous drain current
80
80
A
T C=100 °C
T C=25 °C3)
I D,pulse
Pulsed drain current
385
290
E AS
I D=77 A, R GS=25 :
Avalanche energy, single pulse
mJ
I D=80 A, V DS=20 V,
di /dt =200 A/μs,
Reverse diode dv /dt
dv /dt
6
kV/μs
T
j,max=175 °C
Gate source voltage4)
V GS
20
V
P tot
T C=25 °C
Power dissipation
107
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 175
55/175/56
1) J-STD20 and JESD22
Rev. 1.9
page 1
2007-08-29