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70V7519S133BFG PDF预览

70V7519S133BFG

更新时间: 2024-02-24 01:07:12
品牌 Logo 应用领域
艾迪悌 - IDT 存储内存集成电路静态存储器PC时钟
页数 文件大小 规格书
22页 226K
描述
Dual-Port SRAM, 256KX36, 4.2ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208

70V7519S133BFG 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:PQFP
包装说明:PLASTIC, QFP-208针数:208
Reach Compliance Code:not_compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.37
最长访问时间:15 ns其他特性:FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK):133 MHzI/O 类型:COMMON
JESD-30 代码:S-PQFP-G208JESD-609代码:e0
长度:28 mm内存密度:9437184 bit
内存集成电路类型:DUAL-PORT SRAM内存宽度:36
湿度敏感等级:3功能数量:1
端口数量:2端子数量:208
字数:262144 words字数代码:256000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX36
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:FQFP封装等效代码:QFP208,1.2SQ,20
封装形状:SQUARE封装形式:FLATPACK, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:2.5/3.3,3.3 V认证状态:Not Qualified
座面最大高度:4.1 mm最大待机电流:0.04 A
最小待机电流:3.15 V子类别:SRAMs
最大压摆率:0.675 mA最大供电电压 (Vsup):3.45 V
最小供电电压 (Vsup):3.15 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn85Pb15)
端子形式:GULL WING端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:20
宽度:28 mm

70V7519S133BFG 数据手册

 浏览型号70V7519S133BFG的Datasheet PDF文件第2页浏览型号70V7519S133BFG的Datasheet PDF文件第3页浏览型号70V7519S133BFG的Datasheet PDF文件第4页浏览型号70V7519S133BFG的Datasheet PDF文件第5页浏览型号70V7519S133BFG的Datasheet PDF文件第6页浏览型号70V7519S133BFG的Datasheet PDF文件第7页 
HIGH-SPEED 3.3V 256K x 36  
SYNCHRONOUS  
BANK-SWITCHABLE  
IDT70V7519S  
DUAL-PORT STATIC RAM  
WITH 3.3V OR 2.5V INTERFACE  
Š
Features:  
– 1.5ns setup to clock and 0.5ns hold on all control, data, and  
address inputs @ 200MHz  
Data input, address, byte enable and control registers  
– Self-timedwriteallowsfastcycletime  
Separate byte controls for multiplexed bus and bus  
matching compatibility  
LVTTL- compatible, 3.3V (±150mV) power supply  
for core  
LVTTL compatible, selectable 3.3V (±150mV) or 2.5V  
(±100mV) power supply for I/Os and control signals on  
each port  
Industrial temperature range (-40°C to +85°C) is  
available at 166MHz and 133MHz  
Available in a 208-pin Plastic Quad Flatpack (PQFP),  
208-pin fine pitch Ball Grid Array (fpBGA), and 256-pin Ball  
GridArray(BGA)  
256K x 36 Synchronous Bank-Switchable Dual-ported  
SRAM Architecture  
64 independent 4K x 36 banks  
– 9 megabits of memory on chip  
Bank access controlled via bank address pins  
High-speed data access  
– Commercial:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns  
(133MHz) (max.)  
Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)  
Selectable Pipelined or Flow-Through output mode  
Counter enable and repeat features  
Dual chip enables allow for depth expansion without  
additional logic  
Full synchronous operation on both ports  
– 5ns cycle time, 200MHzoperation(14Gbps bandwidth)  
– Fast 3.4ns clock to data out  
Supports JTAG features compliant with IEEE 1149.1  
FunctionalBlockDiagram  
PL/FT  
L
PL/FT  
OPT  
CLK  
ADS  
CNTEN  
REPEAT  
R/W  
CE0R  
CE1R  
BE3R  
BE2R  
BE1R  
BE0R  
R
OPT  
L
R
CLK  
L
R
ADS  
L
R
CNTEN  
REPEAT  
R/W  
L
R
L
R
L
R
MUX  
CE0L  
CE1L  
BE3L  
BE2L  
BE1L  
BE0L  
CONTROL  
LOGIC  
CONTROL  
LOGIC  
4Kx36  
MEMORY  
ARRAY  
(BANK 0)  
OEL  
OER  
MUX  
MUX  
I/O  
CONTROL  
I/O  
CONTROL  
I/O0L-35L  
I/O0R-35R  
4Kx36  
MEMORY  
ARRAY  
A
11R  
0R  
(BANK 1)  
A
11L  
ADDRESS  
DECODE  
ADDRESS  
DECODE  
A
A
0L  
MUX  
BA5R  
BA4R  
BA3R  
BA2R  
BA1R  
BA0R  
BA5L  
BA4L  
BA3L  
BA2L  
BA1L  
BA0L  
BANK  
DECODE  
BANK  
DECODE  
MUX  
4Kx36  
MEMORY  
ARRAY  
(BANK 63)  
NOTE:  
MUX  
1. The Bank-Switchable dual-port uses a true SRAM  
core instead of the traditional dual-port SRAM core.  
As a result, it has unique operating characteristics.  
Please refer to the functional description on page 19  
for details.  
,
5618 drw 01  
TMS  
TCK  
TRST  
TDI  
TDO  
JTAG  
JANUARY 2009  
1
DSC 5618/7  
©2009IntegratedDeviceTechnology,Inc.  

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