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GM76U8128CLP-85E PDF预览

GM76U8128CLP-85E

更新时间: 2024-01-22 01:31:50
品牌 Logo 应用领域
海力士 - HYNIX 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 101K
描述
Standard SRAM, 128KX8, 85ns, CMOS, PDIP32

GM76U8128CLP-85E 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:DIP, DIP32,.6Reach Compliance Code:compliant
风险等级:5.88Is Samacsys:N
最长访问时间:85 nsI/O 类型:COMMON
JESD-30 代码:R-PDIP-T32JESD-609代码:e0
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:128KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP32,.6
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL电源:3 V
认证状态:Not Qualified最小待机电流:2 V
子类别:SRAMs最大压摆率:0.04 mA
标称供电电压 (Vsup):3 V表面贴装:NO
技术:CMOS温度等级:OTHER
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
Base Number Matches:1

GM76U8128CLP-85E 数据手册

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GM76U8128CL/CLL  
LG Semicon Co.,Ltd.  
131,072 WORDS x 8 BIT  
CMOS STATIC RAM  
Description  
Pin Configuration  
The GM76U8128CL/CLL is a 1,048,576 bits static  
random access memory organized as 131,072 words  
by 8 bits. Using a 0.6um advanced CMOS technology  
and it provides high speed operation with minimum  
cycle time of 85/100ns. The device is placed in a low  
power standby mode with /CS1 high or CS2 low and  
the output enable (/OE) allows fast memory access.  
Thus it is suitable for high speed and low power  
applications, especially where battery back-up is  
required.  
NC  
A16  
A14  
1
32 VCC  
2
3
4
5
6
31  
A15  
30 CS2  
29 /WE  
A12  
A7  
28  
A13  
A6  
27 A8  
26 A9  
25 A11  
A5  
A4  
A3  
A2  
A1  
A0  
7
8
Features  
9
24  
/OE  
* Fast Speed : 85/100ns  
10  
11  
23  
A10  
* Low Power Standby and Low Power Operation  
Standby : 66uW Max. at TA = - 40 ~ 85C(LLE/LLI)  
99uW Max. at TA = - 40 ~ 85C(LE/LI)  
49.5uW Max. at TA = 0 ~ 70C(LL)  
165uW Max. at TA = 0 ~ 70C(L)  
Operation : 132mW (Max)  
22  
/CS1  
12  
21  
I/O7  
I/O0 13  
I/O1 14  
20 I/O6  
19 I/O5  
15  
18  
I/O2  
I/O4  
* Completely Static RAM : No Clock or Timing  
Strobe Required  
16  
17  
VSS  
I/O3  
* Equal Access and Cycle Time  
* TTL compatible inputs and outputs  
* Capability of Battery Back-up Operation  
* Single + 3.0V+/-0.3V Operation  
* Standard 32DIP, SOP and TSOP-I,STSOP-I  
* Temperature Range  
(Top View)  
Block Diagram  
A0  
A1  
A2  
Commercial(0¡ 70C) : GM76U8128C  
Extended (-25 ~ 85C) : GM76U8128C-E  
Industrial (-40 ~ 85C) : GM76U8128C-I  
MEMORY CELL ARRAY  
1024 x 128 x 8  
10  
1024  
X
Decoder  
(128K x 8)  
Address  
Buffer  
Pin Description  
Pin  
A0-A16  
/WE  
Function  
Address Inputs  
A14  
A15  
A16  
128 x 8  
7
128  
Y
Column Select  
Decorder  
Write Enable Input  
Chip Select Input  
Output Enable Input  
Data Inputs/Outputs  
Power Supply (2.7V ~3.3V)  
Ground  
/CS1, CS2  
/OE  
/CS1, CS2  
8
/CS1  
CS2  
Chip  
Control  
I/O0-I/O7  
VCC  
/OE, /WE  
/OE  
I/O Buffer  
Chip  
Control  
/WE  
VSS  
NC  
No Connection  
109  

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