5秒后页面跳转
GM72V66841ELT-7K PDF预览

GM72V66841ELT-7K

更新时间: 2024-01-05 22:17:19
品牌 Logo 应用领域
海力士 - HYNIX 存储内存集成电路光电二极管动态存储器时钟
页数 文件大小 规格书
10页 90K
描述
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM

GM72V66841ELT-7K 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP54,.46,32
针数:54Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.76访问模式:FOUR BANK PAGE BURST
最长访问时间:6 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):100 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:R-PDSO-G54
JESD-609代码:e0长度:22.22 mm
内存密度:67108864 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:8功能数量:1
端口数量:1端子数量:54
字数:8388608 words字数代码:8000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8MX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP54,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified刷新周期:4096
座面最大高度:1.2 mm自我刷新:YES
连续突发长度:1,2,4,8,FP最大待机电流:0.0004 A
子类别:DRAMs最大压摆率:0.16 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

GM72V66841ELT-7K 数据手册

 浏览型号GM72V66841ELT-7K的Datasheet PDF文件第2页浏览型号GM72V66841ELT-7K的Datasheet PDF文件第3页浏览型号GM72V66841ELT-7K的Datasheet PDF文件第4页浏览型号GM72V66841ELT-7K的Datasheet PDF文件第5页浏览型号GM72V66841ELT-7K的Datasheet PDF文件第6页浏览型号GM72V66841ELT-7K的Datasheet PDF文件第7页 
GM72V66841ET/ELT  
2,097,152 WORD x 8 BIT x 4 BANK  
SYNCHRONOUS DYNAMIC RAM  
Description  
Pin Configuration  
The GM72V66841ET/ELT is a synchronous  
dynamic random access memory comprised of  
67,108,864 memory cells and logic including  
input and output circuits operating synchronously  
by referring to the positive edge of the externally  
provided Clock.  
1
2
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
VCC  
DQ0  
VCCQ  
NC  
DQ1  
VSSQ  
NC  
DQ2  
VCCQ  
NC  
DQ3  
VSSQ  
NC  
VCC  
NC  
/WE  
/CAS  
/RAS  
/CS  
VSS  
DQ7  
VSSQ  
NC  
DQ6  
VCCQ  
NC  
DQ5  
VSSQ  
NC  
DQ4  
VCCQ  
NC  
VSS  
NC  
DQM  
CLK  
CKE  
NC  
3
4
5
6
7
The GM72V66841ET/ELT provides four banks  
of 2,097,152 word by 8 bit to realize high  
bandwidth with the Clock frequency up to 143  
Mhz.  
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
JEDEC STANDARD  
400 mil 54 PIN TSOP II  
Features  
(TOP VIEW)  
* PC133/PC100/PC66 Compatible  
-7(143MHz)/-75(133MHz)/-8(125MHz)  
-7K(PC100,2-2-2)/-7J(PC100,3-2-2)  
* 3.3V single Power supply  
* LVTTL interface  
* Max Clock frequency  
BA0/A13  
BA1/A12  
A10,AP  
A0  
A11  
A9  
A8  
A7  
A6  
A5  
A1  
A2  
A3  
VCC  
143/133/125/100MHz  
* 4,096 refresh cycle per 64 ms  
* Two kinds of refresh operation  
Auto refresh / Self refresh  
A4  
VSS  
* Programmable burst access capability ;  
- Sequence:Sequential / Interleave  
- Length :1/2/4/8/FP  
* Programmable CAS latency : 2/3  
* 4 Banks can operate independently or  
simultaneously  
* Burst read/burst write or burst read/single  
write operation capability  
* Input and output masking by DQM input  
* One Clock of back to back read or write  
command interval  
* Synchronous Power down and Clock  
suspend capability with one Clock latency  
for both entry and exit  
* JEDEC Standard 54Pin 400mil TSOP II  
Package  
Pin Name  
CLK  
CKE  
CS  
RAS  
CAS  
WE  
Clock  
Clock Enable  
Chip Select  
Row Address Strobe  
Column Address Strobe  
Write Enable  
A0~A9,A11 Address input  
A10 / AP  
BA0/A13  
~BA1/A12  
Address input or Auto Precharge  
Bank select  
DQ0~DQ7 Data input / Data output  
DQM  
VCCQ  
VSSQ  
VCC  
VSS  
Data input / output Mask  
VCC for DQ  
VSS for DQ  
Power for internal circuit  
Ground for internal circuit  
No Connection  
NC  
This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any  
-1-  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 1.1/Apr.01  

与GM72V66841ELT-7K相关器件

型号 品牌 描述 获取价格 数据表
GM72V66841ELT-8 HYNIX 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM

获取价格

GM72V66841ET HYNIX 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM

获取价格

GM72V66841ET-7 HYNIX 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM

获取价格

GM72V66841ET-75 ETC x8 SDRAM

获取价格

GM72V66841ET-7J ETC x8 SDRAM

获取价格

GM72V66841ET-7K HYNIX 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM

获取价格