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GM72V66841ELT-75 PDF预览

GM72V66841ELT-75

更新时间: 2024-02-09 08:43:50
品牌 Logo 应用领域
海力士 - HYNIX 内存集成电路光电二极管动态存储器时钟
页数 文件大小 规格书
10页 90K
描述
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM

GM72V66841ELT-75 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP54,.46,32
针数:54Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.76Is Samacsys:N
访问模式:FOUR BANK PAGE BURST最长访问时间:5.4 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):133 MHz
I/O 类型:COMMON交错的突发长度:1,2,4,8
JESD-30 代码:R-PDSO-G54JESD-609代码:e0
长度:22.22 mm内存密度:67108864 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:8
功能数量:1端口数量:1
端子数量:54字数:8388608 words
字数代码:8000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:8MX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP54,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
刷新周期:4096座面最大高度:1.2 mm
自我刷新:YES连续突发长度:1,2,4,8,FP
最大待机电流:0.0004 A子类别:DRAMs
最大压摆率:0.16 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

GM72V66841ELT-75 数据手册

 浏览型号GM72V66841ELT-75的Datasheet PDF文件第2页浏览型号GM72V66841ELT-75的Datasheet PDF文件第3页浏览型号GM72V66841ELT-75的Datasheet PDF文件第4页浏览型号GM72V66841ELT-75的Datasheet PDF文件第5页浏览型号GM72V66841ELT-75的Datasheet PDF文件第6页浏览型号GM72V66841ELT-75的Datasheet PDF文件第7页 
GM72V66841ET/ELT  
2,097,152 WORD x 8 BIT x 4 BANK  
SYNCHRONOUS DYNAMIC RAM  
Description  
Pin Configuration  
The GM72V66841ET/ELT is a synchronous  
dynamic random access memory comprised of  
67,108,864 memory cells and logic including  
input and output circuits operating synchronously  
by referring to the positive edge of the externally  
provided Clock.  
1
2
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
VCC  
DQ0  
VCCQ  
NC  
DQ1  
VSSQ  
NC  
DQ2  
VCCQ  
NC  
DQ3  
VSSQ  
NC  
VCC  
NC  
/WE  
/CAS  
/RAS  
/CS  
VSS  
DQ7  
VSSQ  
NC  
DQ6  
VCCQ  
NC  
DQ5  
VSSQ  
NC  
DQ4  
VCCQ  
NC  
VSS  
NC  
DQM  
CLK  
CKE  
NC  
3
4
5
6
7
The GM72V66841ET/ELT provides four banks  
of 2,097,152 word by 8 bit to realize high  
bandwidth with the Clock frequency up to 143  
Mhz.  
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
JEDEC STANDARD  
400 mil 54 PIN TSOP II  
Features  
(TOP VIEW)  
* PC133/PC100/PC66 Compatible  
-7(143MHz)/-75(133MHz)/-8(125MHz)  
-7K(PC100,2-2-2)/-7J(PC100,3-2-2)  
* 3.3V single Power supply  
* LVTTL interface  
* Max Clock frequency  
BA0/A13  
BA1/A12  
A10,AP  
A0  
A11  
A9  
A8  
A7  
A6  
A5  
A1  
A2  
A3  
VCC  
143/133/125/100MHz  
* 4,096 refresh cycle per 64 ms  
* Two kinds of refresh operation  
Auto refresh / Self refresh  
A4  
VSS  
* Programmable burst access capability ;  
- Sequence:Sequential / Interleave  
- Length :1/2/4/8/FP  
* Programmable CAS latency : 2/3  
* 4 Banks can operate independently or  
simultaneously  
* Burst read/burst write or burst read/single  
write operation capability  
* Input and output masking by DQM input  
* One Clock of back to back read or write  
command interval  
* Synchronous Power down and Clock  
suspend capability with one Clock latency  
for both entry and exit  
* JEDEC Standard 54Pin 400mil TSOP II  
Package  
Pin Name  
CLK  
CKE  
CS  
RAS  
CAS  
WE  
Clock  
Clock Enable  
Chip Select  
Row Address Strobe  
Column Address Strobe  
Write Enable  
A0~A9,A11 Address input  
A10 / AP  
BA0/A13  
~BA1/A12  
Address input or Auto Precharge  
Bank select  
DQ0~DQ7 Data input / Data output  
DQM  
VCCQ  
VSSQ  
VCC  
VSS  
Data input / output Mask  
VCC for DQ  
VSS for DQ  
Power for internal circuit  
Ground for internal circuit  
No Connection  
NC  
This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any  
-1-  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 1.1/Apr.01  

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