是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | DIP, DIP20,.3 | Reach Compliance Code: | compliant |
风险等级: | 5.87 | 最长访问时间: | 60 ns |
I/O 类型: | COMMON | JESD-30 代码: | R-PDIP-T20 |
JESD-609代码: | e0 | 内存密度: | 1048576 bit |
内存集成电路类型: | FAST PAGE DRAM | 内存宽度: | 4 |
端子数量: | 20 | 字数: | 262144 words |
字数代码: | 256000 | 组织: | 256KX4 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP20,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
电源: | 5 V | 认证状态: | Not Qualified |
刷新周期: | 512 | 子类别: | DRAMs |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
GM71C4256BL-70 | LG | New Generation Dynamic RAM |
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GM71C4256BL-80 | LG | New Generation Dynamic RAM |
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GM71C4256BL-80 | HYNIX | Fast Page DRAM, 256KX4, 80ns, CMOS, PDIP20 |
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GM71C4256BLJ | LG | New Generation Dynamic RAM |
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GM71C4256BLJ-60 | LG | New Generation Dynamic RAM |
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GM71C4256BLJ-60 | HYNIX | Fast Page DRAM, 256KX4, 60ns, CMOS, PDSO20 |
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