MMBT3904
TRANSISTOR(NPN)
SOT-23
FEATURES
z Complementary Type The PNP Transistor MMBT3906 is Recommended
z
Epitaxial Planar Die Construction
(3)C
MARKING: 1AM
1AM
(1)B
(2)E
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Value
Unit
60
V
VCEO
VEBO
IC
40
6
V
V
Emitter-Base Voltage
Collector Current
200
200
625
mA
mW
℃/W
PC
Total Device Dissipation
RθJA
ThermalResistanceFromJunctiontoAmbient
TJ
Junction Temperature
Storage Temperature
150
℃
℃
Tstg
-55 ~ +150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
60
40
6
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)
IC= 10μA, IE=0
IC= 1mA, IB=0
IE=10μA, IC=0
VCB=60V, IE=0
CBO
V(BR)
V(BR)
ICBO
ICEX
V
CEO
V
EBO
0.1
50
μA
nA
μA
Collector cut-off current
VCE=30V,VBE(off)=3V
VEB=5V, IC=0
Emitter cut-off current
IEBO
0.1
400
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
VCE=1V, IC=10mA
VCE=1V, IC= 50mA
VCE=1V, IC= 100mA
IC=50mA, IB= 5mA
IC= 50mA, IB= 5mA
VCE=20V, IC=10mA,f=100MHz
VCC=3V,VBE=-0.5V
IC=10mA, IB1=-IB2=1.0mA
VCC=3V,IC=10mA,
IB1=-IB2=1mA
100
60
DC current gain
30
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
0.3
V
0.95
V
300
MHz
nS
nS
nS
nS
35
35
td
Rise Time
t
r
Storage Time
200
50
ts
Fall Time
tf
CLASSIFICATION OF hFE(1)
Rank
O
Y
G
Range
100-200
200-300
300-400
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05