Spec. No. : HE6721
Issued Date : 1993.09.24
Revised Date : 2002.03.04
Page No. : 1/3
HI-SINCERITY
MICROELECTRONICS CORP.
HTIP31C
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP31C is designed for use in general purpose amplifier and
switching applications.
TO-220
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 3 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=1mA, IE=0
IC=30mA, IC=0
VCE=100V, IB=0
VCE=60V, IB=0
VEB=5V, IC=0
IC=3A, IB=375mA
IC=3A, VCE=4V
IC=1A, VCE=4V
IC=3A, VCE=4V
IC=0.5A, VCE=10V, f=1MHz
BVCBO
BVCEO
ICES
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
100
100
-
-
-
-
-
25
10
3
-
-
-
-
-
-
-
-
-
-
-
-
V
V
uA
uA
mA
V
200
300
1
1.2
1.8
-
V
50
-
MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HTIP31C
HSMC Product Specification