HMC735LP5 / 735LP5E
v03.0609
MMIC VCO w/ DIVIDE-BY-4
10.5 - 12.2 GHz
Typical Applications
The HMC735LP5(E) is ideal for:
• Point-to-Point/Multi-Point Radio
• Test Equipment & Industrial Controls
• SATCOM
Features
Dual Output: Fo = 10.5 - 12.2 GHz
Fo/4 = 2.625 - 3.05 GHz
Pout: +17 dBm
Phase Noise: -100 dBc/Hz @ 100 kHz Typ.
No External Resonator Needed
32 Lead 5x5mm SMT Package: 25mm2
• Military End-Use
Functional Diagram
General Description
The HMC735LP5(E) is a GaAs InGaP Heterojunc-
tion Bipolar Transistor (HBT) MMIC VCO. The
HMC735LP5(E) integrates resonators, negative
resistance devices, varactor diodes and features a
divide-by-4 frequency output. The VCO’s phase noise
performance is excellent over temperature, shock,
and process due to the oscillator’s monolithic
structure. Power output is +17 dBm typical from a
+5V supply voltage. The prescaler function can be dis-
abled to conserve current if not required. The voltage
controlled oscillator is packaged in a leadless QFN
5x5 mm surface mount package, and requires no
external matching components.
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Electrical Specifications, TA = +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V
Parameter
Min.
Typ.
Max.
Units
Fo
Fo/4
10.5 - 12.2
2.625 - 3.05
GHz
GHz
Frequency Range
Power Output
RFOUT
RFOUT/4
14
-8
21
-1
dBm
dBm
SSB Phase Noise @ 100 kHz Offset,
Vtune= +5V @ RFOUT
-100
dBc/Hz
Tune Voltage
Vtune
1
13
240
10
V
Supply Current
Icc(Dig) + Icc(Amp) + Icc(RF)
180
217
8
mA
μA
dB
Tune Port Leakage Current (Vtune= 13V)
Output Return Loss
1/2
2nd
3rd
-65
-18
-40
dBc
dBc
dBc
Harmonics/Subharmonics
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
50
30
1.4
MHz pp
MHz/V
MHz/°C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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