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HMC484MS8GETR PDF预览

HMC484MS8GETR

更新时间: 2024-02-23 00:41:21
品牌 Logo 应用领域
HITTITE 开关
页数 文件大小 规格书
8页 273K
描述
Diversity Switch, 0MHz Min, 3000MHz Max, 1.3dB Insertion Loss-Max, ROHS COMPLIANT, ULTRA SMALL, PLASTIC, SMT, MSOP-8

HMC484MS8GETR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:TSSOP8,.19
Reach Compliance Code:unknown风险等级:5.92
1dB压缩点:35 dBm最大插入损耗:1.3 dB
最小隔离度:26 dBJESD-609代码:e0
安装特点:SURFACE MOUNT功能数量:1
端子数量:8最大工作频率:3000 MHz
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:TSSOP8,.19
端口终止:REFLECTIVE电源:5 V
射频/微波设备类型:SPDT子类别:RF/Microwave Switches
表面贴装:YES技术:GAAS
端子面层:Tin/Lead (Sn/Pb)

HMC484MS8GETR 数据手册

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HMC484MS8G / 484MS8GE  
v04.0608  
GaAs MMIC 10 WATT T/R SWITCH  
DC - 3 GHz  
Typical Applications  
Features  
The HMC484MS8G / HMC484MS8GE is ideal for:  
• Wireless Infrastructure  
High RF Power Handling:> +40 dBm  
High Third Order Intercept: > +70 dBm  
Single Positive Supply: +3 to +10 Vdc  
Low Insertion Loss: 0.4 to 0.6 dB  
• ISM/Cellular Portables/Handsets  
• Automotive Telematics  
• Mobile Radio  
Ultra Small MSOP8G Package: 14.8 mm2  
Included in the HMC-DK005 Designer’s Kit  
• Test Equipment  
General Description  
Functional Diagram  
The HMC484MS8G & HMC484MS8GE are low-  
cost SPDT switches in 8-lead MSOPG packages for  
use in transmit-receive applications which require  
very low distortion at high input signal power levels,  
through 10 watts (+40 dBm). The device can control  
signals from DC to 3.0 GHz. The design provides  
exceptional intermodulation performance; > +70 dBm  
third order intercept at +5 volt bias. RF1 and RF2  
are reflective shorts when “OFF”. On-chip circuitry  
allows single positive supply operation from +3 Vdc  
to +10 Vdc at very low DC current with control inputs  
compatible with CMOS and most TTL logic families.  
11  
Electrical Specifications,  
TA = +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc (Unless Otherwise Stated), 50 Ohm System  
Parameter  
Frequency  
Min.  
Typ.  
Max.  
Units  
DC - 1.0 GHz  
DC - 2.0 GHz  
DC - 2.5 GHz  
DC - 3.0 GHz  
0.4  
0.6  
0.8  
0.9  
0.6  
0.8  
1.1  
1.3  
dB  
dB  
dB  
dB  
Insertion Loss  
Isolation  
DC - 3.0 GHz  
26  
30  
dB  
DC - 1.0 GHz  
DC - 2.0 GHz  
DC - 2.5 GHz  
DC - 3.0 GHz  
24  
20  
17  
13  
dB  
dB  
dB  
dB  
Return Loss (On State)  
Vctl = 0/+3V  
Vctl = 0/+5V  
Vctl = 0/+8V  
32  
36  
39  
dBm  
dBm  
dBm  
Input Power for 0.1dB Compression  
0.5 - 3.0 GHz  
0.5 - 3.0 GHz  
Vctl = 0/+3V  
Vctl = 0/+5V  
Vctl = 0/+8V  
32  
37  
40  
35.5  
40  
>40  
dBm  
dBm  
dBm  
Input Power for 1dB Compression  
Input Third Order Intercept  
0.5 - 1.0 GHz  
0.5 - 3.0 GHz  
72  
70  
dBm  
dBm  
(Two-tone input power = +30 dBm each tone)  
Switching Characteristics  
tRISE, tFALL (10/90% RF)  
tON, tOFF (50% CTL to 10/90%  
RF)  
DC - 3.0 GHz  
15  
40  
ns  
ns  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 132  

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