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HMC358MS8GETR PDF预览

HMC358MS8GETR

更新时间: 2024-02-20 06:09:50
品牌 Logo 应用领域
HITTITE 振荡器压控振荡器缓冲放大器
页数 文件大小 规格书
6页 197K
描述
Voltage Controlled Oscillator, 5800MHz Min, 6800MHz Max, ROHS COMPLIANT, PLASTIC, SMT, MSOP8G, 8 PIN

HMC358MS8GETR 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
包装说明:PLASTIC, SMT, MSOP8G, 8 PINReach Compliance Code:compliant
风险等级:5.65其他特性:TAPE AND REEL
最大控制电压:10 V最小控制电压:
JESD-609代码:e0安装特点:SURFACE MOUNT
偏移频率:100 kHz最大工作频率:6800 MHz
最小工作频率:5800 MHz最高工作温度:85 °C
最低工作温度:-40 °C振荡器类型:VOLTAGE CONTROLLED OSCILLATOR
输出功率:8 dBm相位噪声:-110 dBc/Hz
物理尺寸:3.1mm x 3.1mm x 1.1mm最大压摆率:100 mA
最大供电电压:3.25 V最小供电电压:2.75 V
标称供电电压:3 V表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

HMC358MS8GETR 数据手册

 浏览型号HMC358MS8GETR的Datasheet PDF文件第2页浏览型号HMC358MS8GETR的Datasheet PDF文件第3页浏览型号HMC358MS8GETR的Datasheet PDF文件第4页浏览型号HMC358MS8GETR的Datasheet PDF文件第5页浏览型号HMC358MS8GETR的Datasheet PDF文件第6页 
HMC358MS8G / 358MS8GE  
v04.0607  
MMIC VCO w/ BUFFER  
AMPLIFIER, 5.8 - 6.8 GHz  
Typical Applications  
Features  
Low noise MMIC VCO w/Buffer Amplifier  
for C-Band applications such as:  
Pout: +11 dBm  
Phase Noise: -110 dBc/Hz @100 KHz  
No External Resonator Needed  
Single Supply: 3V @ 100 mA  
15mm2 MSOP8G SMT Package  
• UNII & Pt. to Pt. Radios  
• 802.11a & HiperLAN WLAN  
• VSAT Radios  
Functional Diagram  
General Description  
The HMC358MS8G & HMC358MS8GE are GaAs  
InGaP Heterojunction Bipolar Transistor (HBT) MMIC  
VCOs. The HMC358MS8G & HMC358MS8GE inte-  
grate resonators, negative resistance devices, varac-  
tor diodes, and buffer amplifiers. The VCO’s phase  
noise performance is excellent over temperature,  
shock, and process due to the oscillator’s monolithic  
structure. Power output is 11 dBm typical from a 3V  
supply voltage. The voltage controlled oscillator is  
packaged in a low cost, surface mount 8 lead MSOP  
package with an exposed base for improved RF and  
thermal performance.  
11  
Electrical Specifications, TA = +25° C, Vcc = +3V  
Parameter  
Frequency Range  
Min.  
8
Typ.  
5.8 - 6.8  
11  
Max.  
Units  
GHz  
dBm  
dBc/Hz  
V
Power Output  
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output  
Tune Voltage (Vtune)  
-110  
0
10  
10  
Supply Current (Icc)  
100  
9
mA  
Tune Port Leakage Current (Vtune= 10V)  
Output Return Loss  
μA  
dB  
Harmonics  
2nd  
3rd  
-10  
-20  
dB  
dB  
Pulling (into a 2.0:1 VSWR)  
Pushing @ Vtune= +3V  
Frequency Drift Rate  
10  
150  
0.8  
MHz pp  
MHz/V  
MHz/°C  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 2  

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